No. |
Part Name |
Description |
Manufacturer |
331 |
1N942 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.044V |
Motorola |
332 |
1N942A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.090V |
Motorola |
333 |
1N942B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.120V |
Motorola |
334 |
1N943 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V |
Motorola |
335 |
1N943A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.036V |
Motorola |
336 |
1N943B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.047V |
Motorola |
337 |
1N944 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
338 |
1N944A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V |
Motorola |
339 |
1N944B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.024V |
Motorola |
340 |
1N945 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.004V |
Motorola |
341 |
1N945A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
342 |
1N945B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.012V |
Motorola |
343 |
2-2WI-1200S-16 |
1600 V, 1290 A, 12.5 kA water cooled A.C.switch |
POSEICO SPA |
344 |
2028-771196-000 |
Synchronous rectification with inhibit, 0.7 A, 1.7 MHz adjustable, step-down switching regulator |
ST Microelectronics |
345 |
288 |
Subminiature halogen lamp. 5.0V, 6.0V; 0.90A, 1,00A; 54 lumens, 100 lumens. |
Gilway Technical Lamp |
346 |
2N3713 |
80 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
347 |
2N3714 |
100 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
348 |
2N3715 |
80 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
349 |
2N3716 |
100 V, 10 A, 150 W, NPN silicon power transistor |
Texas Instruments |
350 |
2N3771 |
50 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
351 |
2N3772 |
100 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
352 |
2N3791 |
-60 V, -10 A, 150 W, PNP silicon power transistor |
Texas Instruments |
353 |
2N6249 |
300V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
354 |
2N6250 |
375V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
355 |
2N6251 |
450V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
356 |
2N6354 |
120V, 10A, 140W silicon N-P-N planar transistor. |
General Electric Solid State |
357 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
358 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
359 |
2N6796 |
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
360 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
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