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Datasheets for A, 1

Datasheets found :: 3268
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No. Part Name Description Manufacturer
331 1N942 Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.044V Motorola
332 1N942A Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.090V Motorola
333 1N942B Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.120V Motorola
334 1N943 Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V Motorola
335 1N943A Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.036V Motorola
336 1N943B Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.047V Motorola
337 1N944 Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V Motorola
338 1N944A Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V Motorola
339 1N944B Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.024V Motorola
340 1N945 Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.004V Motorola
341 1N945A Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V Motorola
342 1N945B Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.012V Motorola
343 2-2WI-1200S-16 1600 V, 1290 A, 12.5 kA water cooled A.C.switch POSEICO SPA
344 2028-771196-000 Synchronous rectification with inhibit, 0.7 A, 1.7 MHz adjustable, step-down switching regulator ST Microelectronics
345 288 Subminiature halogen lamp. 5.0V, 6.0V; 0.90A, 1,00A; 54 lumens, 100 lumens. Gilway Technical Lamp
346 2N3713 80 V, 10 A, 150 W, NPN silicon power transistor Texas Instruments
347 2N3714 100 V, 10 A, 150 W, NPN silicon power transistor Texas Instruments
348 2N3715 80 V, 10 A, 150 W, NPN silicon power transistor Texas Instruments
349 2N3716 100 V, 10 A, 150 W, NPN silicon power transistor Texas Instruments
350 2N3771 50 V, 30 A, 150 W, NPN silicon power transistor Texas Instruments
351 2N3772 100 V, 30 A, 150 W, NPN silicon power transistor Texas Instruments
352 2N3791 -60 V, -10 A, 150 W, PNP silicon power transistor Texas Instruments
353 2N6249 300V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
354 2N6250 375V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
355 2N6251 450V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
356 2N6354 120V, 10A, 140W silicon N-P-N planar transistor. General Electric Solid State
357 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
358 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
359 2N6796 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Fairchild Semiconductor
360 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State


Datasheets found :: 3268
Page: | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 |



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