No. |
Part Name |
Description |
Manufacturer |
331 |
BSW12 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits. Electrically the BSW12 resembles 2N708 |
AEG-TELEFUNKEN |
332 |
BU208 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
333 |
BU209 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
334 |
BU209A |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
335 |
CLASS C POWER |
RF transistor design |
Motorola |
336 |
EFT38S |
Ge-ALLOY-pnp TRANSISTOR designed for use in electronic computers |
IPRS Baneasa |
337 |
JAN2N2708 |
NPN silicon annular transistor designed for low power IF and RF use in VHF/UHF amplifier, mixer and oscillator applications |
Motorola |
338 |
JAN2N3127 |
PNP germanium mesa transistor designed for industrial and commercial VHF/UHF amplifier applications |
Motorola |
339 |
JAN2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
340 |
JAN2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
341 |
JAN2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
342 |
JAN2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
343 |
JAN2N559-1 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
344 |
JAN2N559-2 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
345 |
JAN2N559-3 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
346 |
MA200 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
347 |
MA201 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
348 |
MA202 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
349 |
MA203 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
350 |
MA204 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
351 |
MA205 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
352 |
MA206 |
Germanium PNP transistor designed for high-voltage applications in the audio frequency range |
Motorola |
353 |
MD3133 |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
354 |
MD3133F |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
355 |
MD3134 |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
356 |
MD3134F |
Dual PNP silicon annular transistor designed for high-speed switching circuits and DC to VHF amplifier applications |
Motorola |
357 |
MD3725 |
Dual NPN silicon annular transistor designed where space reduction is required |
Motorola |
358 |
MD3725F |
Dual NPN silicon annular transistor designed where space reduction is required, TO-89 case |
Motorola |
359 |
MD3762 |
Dual PNP silicon annular transistor designed where space reduction is required |
Motorola |
360 |
MD3762F |
Dual PNP silicon annular transistor designed where space reduction is required, case TO-89 |
Motorola |
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