| No. |
Part Name |
Description |
Manufacturer |
| 331 |
BF166 |
Epitaxial planar NPN transistor designed to be used as a gain-controlled VHF amplifier |
SGS-ATES |
| 332 |
BF167 |
Silicon Planar NPN transistor - TV AGC IF amplifier |
SGS-ATES |
| 333 |
BF180 |
U.H.F. Silicon Planar N-P-N Transistor |
Mullard |
| 334 |
BF181 |
U.H.F. Silicon Planar N-P-N Transistor |
Mullard |
| 335 |
BF200 |
V.H.F. Silicon Planar N-P-N Transistor |
Mullard |
| 336 |
BF222 |
Epitaxial planar NPN transistor, designed for tuners of FM receivers, and features low noise, high gain and excelent forward AGC |
SGS-ATES |
| 337 |
BF260 |
Silicon planar NPN transistor - AGC VHF amplifier |
SGS-ATES |
| 338 |
BF271 |
Silicon planar NPN transistor - video IF amplifier |
SGS-ATES |
| 339 |
BF273 |
Silicon planar NPN RF transistor |
SGS-ATES |
| 340 |
BF274 |
Silicon planar NPN RF transistor |
SGS-ATES |
| 341 |
BF288 |
Silicon Planar NPN RF transistor |
SGS-ATES |
| 342 |
BF355 |
Bipolar NPN Device |
SemeLAB |
| 343 |
BF357S |
Epitaxial planar NPN transistor, very low noise, high gain and good intermodulation properties |
SGS-ATES |
| 344 |
BF454 |
Silicon planar NPN transistor - AM/FM IF amplifier |
SGS-ATES |
| 345 |
BF455 |
Silicon Planar NPN RF Transistor |
SGS-ATES |
| 346 |
BF921S |
Epitaxial planar NPN transistor, intended for use as preamplifier for surface wave TV IF filters and VHF-UHF wide band amplifier |
SGS-ATES |
| 347 |
BFP 181R |
RF-Bipolar NPN Type Transistors with transition frequency of 8 GHz |
Infineon |
| 348 |
BFP 620 |
SiGe70 GHz RF-Bipolar NPN Type Transistors |
Infineon |
| 349 |
BFP 620F |
SiGe70 GHz RF-Bipolar NPN Type Transistors |
Infineon |
| 350 |
BFP 640F |
SiGe RF-Bipolar NPN Transistors in standard SOT343 and flatlead TSFP-4 |
Infineon |
| 351 |
BFP460 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
| 352 |
BFQ85 |
Epitaxial planar NPN transistor, intended for common-emitter, high gain, wide band application up to 1.5GHz |
SGS-ATES |
| 353 |
BFQ88 |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
| 354 |
BFQ88A |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
| 355 |
BFR37 |
Epitaxial planar NPN transistor, very high fT and very low Cre |
SGS-ATES |
| 356 |
BFR460L3 |
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages |
Infineon |
| 357 |
BFR90 |
Epitaxial planar NPN transistor, utilizing Planox® silicon nitride, intended for VHF-UHF wide band applications |
SGS-ATES |
| 358 |
BFR90B |
Epitaxial planar NPN transistor, intended for high-gain, wide band, low noise application up to 1,5GHz |
SGS-ATES |
| 359 |
BFR90H |
Epitaxial planar NPN transistor, intended for VHF-UHF wide-band application |
SGS-ATES |
| 360 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
| | | |
