| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2DD2656 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 332 |
2DD2656-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 333 |
2DD2661 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors |
Diodes |
| 334 |
2DD2661-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors |
Diodes |
| 335 |
2DD2678 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors |
Diodes |
| 336 |
2DD2678-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors |
Diodes |
| 337 |
2DD2679 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 338 |
2DD2679-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 339 |
2DI150A140 |
Bipolar Transistors |
Fuji Electric |
| 340 |
2N1131 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
| 341 |
2N1420 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 342 |
2N1420 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
| 343 |
2N1613 |
Silicon NPN planar transistor for high speed switching and RF amplifiers |
AEG-TELEFUNKEN |
| 344 |
2N1613 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
| 345 |
2N1613 |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
| 346 |
2N1613 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 347 |
2N1613 |
NPN silicon planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 348 |
2N1613 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 349 |
2N1613A |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
| 350 |
2N1711 |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
| 351 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 352 |
2N1711 |
Silicon NPN Planar Transistor (in german) |
ITT Semiconductors |
| 353 |
2N1711 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 354 |
2N1711A |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
| 355 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 356 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
| 357 |
2N1893 |
Silicon NPN planar transistor for high speed switchings |
AEG-TELEFUNKEN |
| 358 |
2N1893 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
| 359 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 360 |
2N1893 |
Silicon NPN Planar Transistor (in german) |
ITT Semiconductors |
| | | |
