| No. |
Part Name |
Description |
Manufacturer |
| 331 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 332 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 333 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 334 |
AT22V10-20DM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 335 |
AT22V10-20GM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 336 |
AT22V10-20LM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 337 |
AT22V10-20NM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 338 |
AT22V10-25DM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 339 |
AT22V10-25GM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 340 |
AT22V10-25LM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 341 |
AT22V10-25NM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 342 |
ATV |
Case dimensions |
Motorola |
| 343 |
AX88871AP |
0.5-7.0V; 10/100BASE dual speed Bripeater controller |
ASIX Electronics Corporation |
| 344 |
AX88872P |
0.3-4.0V; 10/100BASE dual speed 8-port repeater with 4-port switch |
ASIX Electronics Corporation |
| 345 |
AX88873P |
0.3-4.0V; 10/100BASE dual speed 8-port repeater |
ASIX Electronics Corporation |
| 346 |
BA6411 |
2 Phase DD Motor Driver |
ROHM |
| 347 |
BA6431S |
3-Phase DD Motor Drivers |
ROHM |
| 348 |
BA6432S |
3-Phase DD Motor Drivers |
ROHM |
| 349 |
BAT114-099 |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) |
Siemens |
| 350 |
BAT114-099R |
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
| 351 |
BAT15-099R |
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
| 352 |
BCM8212 |
Transceiver with Internal Loop Timing and Phase Detector |
Broadcom |
| 353 |
BCW31 |
Low frequency transistor, code on case D1 |
mble |
| 354 |
BCW32 |
Low frequency transistor, code on case D2 |
mble |
| 355 |
BCW33 |
Low frequency transistor, code on case D3 |
mble |
| 356 |
BD675A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 357 |
BD676A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 358 |
BD677 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 359 |
BD677A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 360 |
BD678 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
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