| No. |
Part Name |
Description |
Manufacturer |
| 331 |
1N4006G |
GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A |
Shanghai Sunrise Electronics |
| 332 |
1N4006GP |
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 800V |
Vishay |
| 333 |
1N4006S |
PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 334 |
1N4007 |
GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0Ampere |
Chenyi Electronics |
| 335 |
1N4007 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 1000V. |
Jinan Gude Electronic Device |
| 336 |
1N4007 |
Silicon Rectifier (nom. current 1A) in DO7 epoxy packages |
Newmarket Transistors NKT |
| 337 |
1N4007 |
PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 338 |
1N4007 |
General Purpose Plastic Rectifier, Forward Current 1.0A, Reverse Voltage 1000V |
Vishay |
| 339 |
1N4007G |
GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER, Reverse Voltage - 50 to 1300 Volts, Forward Current - 1.0Amperes |
Chenyi Electronics |
| 340 |
1N4007G |
GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A |
Shanghai Sunrise Electronics |
| 341 |
1N4007GP |
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 1000V |
Vishay |
| 342 |
1N4007S |
PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 343 |
1N4099 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 344 |
1N4099 |
LOW LEVEL ZENER DIODES LOW CURRENT: 250��A - LOW NOISE |
Knox Semiconductor Inc |
| 345 |
1N4099-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 346 |
1N4100 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 347 |
1N4100 |
LOW LEVEL ZENER DIODES LOW CURRENT: 250��A - LOW NOISE |
Knox Semiconductor Inc |
| 348 |
1N4100-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 349 |
1N4101 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 350 |
1N4101 |
LOW LEVEL ZENER DIODES LOW CURRENT: 250��A - LOW NOISE |
Knox Semiconductor Inc |
| 351 |
1N4101-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 352 |
1N4102 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 353 |
1N4102 |
LOW LEVEL ZENER DIODES LOW CURRENT: 250��A - LOW NOISE |
Knox Semiconductor Inc |
| 354 |
1N4102-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 355 |
1N4103 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 356 |
1N4103 |
LOW LEVEL ZENER DIODES LOW CURRENT: 250��A - LOW NOISE |
Knox Semiconductor Inc |
| 357 |
1N4103-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 358 |
1N4104 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 359 |
1N4104 |
LOW LEVEL ZENER DIODES LOW CURRENT: 250��A - LOW NOISE |
Knox Semiconductor Inc |
| 360 |
1N4104-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
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