| No. |
Part Name |
Description |
Manufacturer |
| 331 |
BC638 |
Transistor. Switching and amplifier applications. Vcer = -60V, Vces = -60V, Vceo = -60V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 332 |
BC640 |
Transistor. Switching and amplifier applications. Vcer = -100V, Vces = -100V, Vceo = -80V, Vebo = -5V, Pc = 1W, Ic = -1A. |
USHA India LTD |
| 333 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 334 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 335 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 336 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 337 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 338 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 339 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 340 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 341 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 342 |
BD244A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 343 |
BD244B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 344 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 345 |
BDX77 |
Medium Power Switching and Amplifier Applications |
Continental Device India Limited |
| 346 |
BF771 |
RF-Bipolar - For modulators and amplifiers in TV and VCR tuners |
Infineon |
| 347 |
BF771 |
NPN Silicon RF Transistor (For modulators and amplifiers in TV and VCR tuners) |
Siemens |
| 348 |
BF771W |
RF-Bipolar - For modulators and amplifiers in TV and VCR tuners |
Infineon |
| 349 |
BF771W |
NPN Silicon RF Transistor (For modulators and amplifiers in TV and VCR tuners) |
Siemens |
| 350 |
BF799 |
RF-Bipolar - For linear broadband amplifier application up to 500 MHz and as SAW filter driver in TV tuners |
Infineon |
| 351 |
BF799 |
NPN SILICON RF TRANSISTOR (For linear broadband amplifier applications up to 500 MHz SAW filter driver in TV tuners) |
Siemens |
| 352 |
BF799W |
RF-Bipolar - For linear broadband amplifier application up to 500 MHz and as SAW filter driver in TV tuners |
Infineon |
| 353 |
BF799W |
NPN Silicon RF Transistor (For linear broadband amplifier applications up to 500MHz SAW filter driver in TV tuners) |
Siemens |
| 354 |
BF921S |
Epitaxial planar NPN transistor, intended for use as preamplifier for surface wave TV IF filters and VHF-UHF wide band amplifier |
SGS-ATES |
| 355 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
| 356 |
BFG19 |
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna) |
Siemens |
| 357 |
BFG193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 358 |
BFG193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 359 |
BFG194 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 360 |
BFG196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
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