| No. |
Part Name |
Description |
Manufacturer |
| 331 |
GLT440L16-40TC |
40ns; 256k x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 332 |
GLT440L16-50J4 |
50ns; 256k x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 333 |
GLT440L16-50TC |
50ns; 256k x 16 CMOS dynamic RAM with extended data output |
G-LINK Technology |
| 334 |
HD74HC367 |
Hex Bus Drivers (noninverted Data Outputs with 3-state outputs) |
Hitachi Semiconductor |
| 335 |
HD74HC368 |
Hex Bus Drivers (inverted Data Outputs with 3-state outputs) |
Hitachi Semiconductor |
| 336 |
HD74LS367 |
Hex Bus Drivers(non-inverted data outputs with three-state outputs) |
Hitachi Semiconductor |
| 337 |
HDMP-0482 |
HDMP-0482 · 1.0625-1.25 GBd Octal Port Bypass Circuit with CDR and Data Valid Detection for FC/Storage and GbE |
Agilent (Hewlett-Packard) |
| 338 |
HDMP-0552 |
HDMP-0552 · 1.0625-2.125 GBd Quad Port Bypass Circuit w/ CDR and Data Valid Detection for Fibre Channel/Storage |
Agilent (Hewlett-Packard) |
| 339 |
HFBR-0527H |
HFBR-0527H · Evaluation Kit for HFBR-1527 & HFBR-2526 125MBd Data Comm HCS Fiber for up to 100 meters |
Agilent (Hewlett-Packard) |
| 340 |
HFBR-0527P |
HFBR-0527P · Evaluation Kit for HFBR-1527 & HFBR-2526 125MBd Data Comm with POF for up to 25 meters |
Agilent (Hewlett-Packard) |
| 341 |
HSDCEP |
Data Converter Evaluation Platform (DCEP), Evaluates High-Speed Data Converters (ADCs) |
MAXIM - Dallas Semiconductor |
| 342 |
IP3348CX10 |
Integrated multi channel LC-filter network for high-speed data interfaces with ESD protection to IEC 61000-4-2 level 4 |
NXP Semiconductors |
| 343 |
IP3348CX15 |
Integrated multi channel LC-filter network for high-speed data interfaces with ESD protection to IEC 61000-4-2 level 4 |
NXP Semiconductors |
| 344 |
IP3348CX20 |
Integrated multi channel LC-filter network for high-speed data interfaces with ESD protection to IEC 61000-4-2 level 4 |
NXP Semiconductors |
| 345 |
IP3348CX5 |
Integrated multi channel LC-filter network for high-speed data interfaces with ESD protection to IEC 61000-4-2 level 4 |
NXP Semiconductors |
| 346 |
IRMS6452 |
4 Mb/s Infrared Data Transceiver (Side View/Top View) |
Vishay |
| 347 |
IRMT6452 |
4 Mb/s Infrared Data Transceiver (Side View/Top View) |
Vishay |
| 348 |
K4D623238B-G(Q)C |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet |
Samsung Electronic |
| 349 |
K4E151611 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 350 |
K4E151611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 351 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 352 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 353 |
K4E151612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 354 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 355 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 356 |
K4E16(7)0411(2)D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 357 |
K4E16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 358 |
K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 359 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 360 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
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