No. |
Part Name |
Description |
Manufacturer |
331 |
2N5432 |
N channel field effect transistor (metal can) |
SESCOSEM |
332 |
2N5433 |
N channel field effect transistor (metal can) |
SESCOSEM |
333 |
2N5434 |
N channel field effect transistor (metal can) |
SESCOSEM |
334 |
2N5484 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS |
Micro Electronics |
335 |
2N5485 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS |
Micro Electronics |
336 |
2N5486 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS |
Micro Electronics |
337 |
2N5505 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
338 |
2N5506 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
339 |
2N5507 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
340 |
2N5508 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
341 |
2N5509 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
342 |
2N5510 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
343 |
2N5511 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
344 |
2N5512 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
345 |
2N5513 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
346 |
2N5514 |
Monolithic Dual P-Channel Field Effect Transistor General Purpose |
Amelco Semiconductor |
347 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
348 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
349 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
350 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
351 |
2N7000 |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
352 |
2N7000 |
N-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
353 |
2N7000_D26Z |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
354 |
2N7002 |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
355 |
2N7002 |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
356 |
2N7002 |
N-Channel Enhancement Mode Field Effect Transistor |
National Semiconductor |
357 |
2N7002 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Panjit International Inc |
358 |
2N7002-01 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
Diodes |
359 |
2N7002DW |
N-Channel Enhancement Mode Field Effect Transistor |
Fairchild Semiconductor |
360 |
2N7002E |
60V; 0.25A; N-channel enchanced mode field effect transistor |
SamHop Microelectronics Corp. |
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