| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 332 |
2N4212 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 333 |
2N4213 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 334 |
2N4214 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 335 |
2N4215 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 336 |
2N4216 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 337 |
2N4223 |
Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications |
Motorola |
| 338 |
2N4224 |
Silicon N-channel junction field-effect transistor, designed for VHF amplifier and mixer applications |
Motorola |
| 339 |
2N4248 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 340 |
2N4249 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 341 |
2N4250 |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 342 |
2N4250A |
Silicon PNP Transistors designed for low level - low nosie amplifier applications |
Central Semiconductor |
| 343 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 344 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 345 |
2N4409 |
NPN silicon epitaxial transistor, designed for driving neon display tubes |
Motorola |
| 346 |
2N4410 |
NPN silicon epitaxial transistor, designed for driving neon display tubes |
Motorola |
| 347 |
2N4416 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 348 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
| 349 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 350 |
2N4441 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 351 |
2N4442 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 352 |
2N4443 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 353 |
2N4444 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 354 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 355 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 356 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 357 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 358 |
2N4948 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
| 359 |
2N4949 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
| 360 |
2N4957 |
Application Note - UHF amplifier design using data sheet design curves |
Motorola |
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