| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2SA1896 |
PNP Epitaxial Planar Silicon Transistor DC/DC Converter, Motor Driver Applications |
SANYO |
| 332 |
2SA1899 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 333 |
2SA1930 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 334 |
2SA1932 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 335 |
2SA1944 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 336 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 337 |
2SA1945 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 338 |
2SA1965 |
TRANSISTOR (POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 339 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 340 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
| 341 |
2SA352 |
Germanium PNP Transistor Drift Junction, intended for use in SW Mixer |
Hitachi Semiconductor |
| 342 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 343 |
2SA354 |
Germanium PNP Transistor Drift Junction, intended for use in MW Frequency Converter |
Hitachi Semiconductor |
| 344 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 345 |
2SA429G |
Silicon NPN triple diffused planar transistor, Nixie Tube Driver applications, high voltage Switching applications |
TOSHIBA |
| 346 |
2SA502 |
Silicon PNP epitaxial planar transistor, fluorescent numerical indicator tube drive applications |
TOSHIBA |
| 347 |
2SA537 |
Silicon PNP Epitaxial Planar Transistor Vcbo=-60V, Vceo=-50V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 348 |
2SA537A |
Silicon PNP Epitaxial Planar Transistor Vcbo=-90V, Vceo=--80V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 349 |
2SA549AH |
Silicon PNP Triple Diffused Planar Transistor, intended for use in High Speed Switching, Indicater Tube Driver |
Hitachi Semiconductor |
| 350 |
2SA562TM |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 351 |
2SA565 |
Silicon PNP Epitaxial Planar Transistor, intended for use in HiFi AMP. Driver, Power Output |
Hitachi Semiconductor |
| 352 |
2SA566 |
Silicon PNP Epitaxial Planar Transistor, intended for use in HiFi AMP. Driver, Power Output |
Hitachi Semiconductor |
| 353 |
2SA733P |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 354 |
2SA733Q |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 355 |
2SA733R |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 356 |
2SA817A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 357 |
2SA949 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AUDIO AMPLIFIER AND HIGH VOLTAGE SWITCHING APPLICATIONS |
TOSHIBA |
| 358 |
2SA965 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 359 |
2SAR293P |
PNP Driver Transistor |
ROHM |
| 360 |
2SAR293P5 |
PNP Middle Power Driver Transistor (-30V / -1.0A) |
ROHM |
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