| No. |
Part Name |
Description |
Manufacturer |
| 331 |
NMC27C16BQE200 |
16,384-Bit (2048 x 8) CMOS EPROM |
Fairchild Semiconductor |
| 332 |
NMC27C256BNE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
| 333 |
NMC27C256BQE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
| 334 |
NMC27C256QE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 335 |
NMC27C32BQE200 |
32,768-Bit (4096 x 8) CMOS EPROM |
National Semiconductor |
| 336 |
NMC27C512ANE200 |
200 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM |
National Semiconductor |
| 337 |
NMC27C512AQE200 |
200 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 338 |
NMC27C64NE200 |
64KBit (8192 x 8) CMOS EPROM [Life-time buy] |
Fairchild Semiconductor |
| 339 |
NMC27C64QE200 |
64KBit (8192 x 8) CMOS EPROM [Life-time buy] |
Fairchild Semiconductor |
| 340 |
NMC27C64QE200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
| 341 |
NTE2003 |
Integrated Circuit Dolby B-Type Noise Reduction Processor |
NTE Electronics |
| 342 |
NTE2004 |
Integrated Circuit Dolby Noise Reduction Circuit |
NTE Electronics |
| 343 |
P4KE200 |
400 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS |
Bytes |
| 344 |
P4KE200 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPERESSOR |
DC Components |
| 345 |
P4KE200 |
TRANSIENT VOLTAGE SUPPRESSOR |
Diodes |
| 346 |
P4KE200 |
Unidirectional and bidirectional Transient Voltage Suppressor Diodes |
Diotec Elektronische |
| 347 |
P4KE200 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 348 |
P4KE200 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 349 |
P4KE200 |
TRANSIENT VOLTAGE SUPPRESSORS DIODE |
Jinan Gude Electronic Device |
| 350 |
P4KE200 |
200 V, 1 mA, 400 W, transient voltage suppressor |
Leshan Radio Company |
| 351 |
P4KE200 |
Ppk=400W, Vc=287V transient voltage suppressor |
MCC |
| 352 |
P4KE200 |
162.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 353 |
P4KE200 |
400 Watt Transient Voltage Suppressors 6.8 to 400 Volts |
Micro Commercial Components |
| 354 |
P4KE200 |
Transient Voltage Suppressor |
Microsemi |
| 355 |
P4KE200 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) |
Panjit International Inc |
| 356 |
P4KE200 |
GPP TRANSIENT VOLTAGE SUPPRESSOR (400 WATT PEAK POWER 1.0 WATT STEADY STATE) |
Rectron Semiconductor |
| 357 |
P4KE200 |
TRANSIENT VOLTAGE SUPPRESSOR |
Shanghai Sunrise Electronics |
| 358 |
P4KE200 |
TVS: Unidirectional |
Taiwan Semiconductor |
| 359 |
P4KE200 |
200 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 360 |
P4KE200 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
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