| No. |
Part Name |
Description |
Manufacturer |
| 331 |
MPSW51A |
ne Watt High Current Transistors |
Motorola |
| 332 |
MPSW51A |
One Watt High Current Transistors |
ON Semiconductor |
| 333 |
MPSW51ARLRA |
One Watt High Current Transistors |
ON Semiconductor |
| 334 |
MPSW51ARLRP |
One Watt High Current Transistors |
ON Semiconductor |
| 335 |
NNC-920A |
Current Transducers NNC-920~960A |
LEM |
| 336 |
NNC-930A |
Current Transducers NNC-920~960A |
LEM |
| 337 |
NNC-940A |
Current Transducers NNC-920~960A |
LEM |
| 338 |
NNC-950A |
Current Transducers NNC-920~960A |
LEM |
| 339 |
NNC-960A |
Current Transducers NNC-920~960A |
LEM |
| 340 |
NSS12600CF8 |
12V 6A LOW VCE(sat) PNP High Current Transistor ChipFET™ |
ON Semiconductor |
| 341 |
NSS20600CF8 |
20V 6A LOW VCE(sat) PNP High Current Transistor ChipFET™ |
ON Semiconductor |
| 342 |
NSS40600CF8 |
40V 6A LOW VCE(sat) PNP High Current Transistor ChipFET¿ |
ON Semiconductor |
| 343 |
RH100-P |
Coreless Coil Current Transducer RH 100~1000-P |
LEM |
| 344 |
RH100-S |
Coreless Coil Current Transducer RH 100~1000-S |
LEM |
| 345 |
RH1000-P |
Coreless Coil Current Transducer RH 100~1000-P |
LEM |
| 346 |
RH1000-S |
Coreless Coil Current Transducer RH 100~1000-S |
LEM |
| 347 |
RH200-P |
Coreless Coil Current Transducer RH 100~1000-P |
LEM |
| 348 |
RH200-S |
Coreless Coil Current Transducer RH 100~1000-S |
LEM |
| 349 |
RH500-P |
Coreless Coil Current Transducer RH 100~1000-P |
LEM |
| 350 |
RH500-S |
Coreless Coil Current Transducer RH 100~1000-S |
LEM |
| 351 |
SMAJ100 |
100.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 352 |
SMAJ100A |
100.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 353 |
SMAJ110 |
110.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 354 |
SMAJ110A |
110.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 355 |
SMAJ120 |
120.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 356 |
SMAJ120A |
120.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 357 |
SMAJ130 |
130.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 358 |
SMAJ130A |
130.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 359 |
SMAJ150 |
150.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 360 |
SMAJ150A |
150.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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