| No. |
Part Name |
Description |
Manufacturer |
| 331 |
PMEG3005ESF |
30 V, 0.5 A low VF MEGA Schottky barrier rectifier |
NXP Semiconductors |
| 332 |
PMEG4002AESF |
40 V, 0.2 A low VF MEGA Schottky barrier rectifier |
Nexperia |
| 333 |
PMEG4002AESF |
40 V, 0.2 A low VF MEGA Schottky barrier rectifier |
NXP Semiconductors |
| 334 |
PMEG4002ESF |
40 V, 0.2 A low VF MEGA Schottky barrier rectifier |
Nexperia |
| 335 |
PMEG4002ESF |
40 V, 0.2 A low VF MEGA Schottky barrier rectifier |
NXP Semiconductors |
| 336 |
PMEG4005AESF |
40 V, 0.5 A low VF MEGA Schottky barrier rectifier |
Nexperia |
| 337 |
PMEG4005AESF |
40 V, 0.5 A low VF MEGA Schottky barrier rectifier |
NXP Semiconductors |
| 338 |
PMEG4005ESF |
40 V, 0.5 A low VF MEGA Schottky barrier rectifier |
Nexperia |
| 339 |
PMEG4005ESF |
40 V, 0.5 A low VF MEGA Schottky barrier rectifier |
NXP Semiconductors |
| 340 |
PSMN018-100ESF |
NextPower 100 V, 18 mΩ N-channel MOSFET in I2PAK package |
Nexperia |
| 341 |
PSMN8R5-100ESF |
NextPower 100 V, 8.8 mΩ N-channel MOSFET in I2PAK package |
Nexperia |
| 342 |
RFAM3620 |
45 - 1218 MHz, 36dB, 12V, GaAs pHEMT-MESFET, Edge QAM MCM |
Qorvo |
| 343 |
RFS1003 |
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ... |
Anadigics Inc |
| 344 |
RFS1006 |
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ... |
Anadigics Inc |
| 345 |
SGF25 |
N-Channel GaAs MESFET |
SANYO |
| 346 |
SGF29 |
GaAs MESFETs |
SANYO |
| 347 |
SGF31 |
GaAs MESFETs |
SANYO |
| 348 |
SGF33 |
GaAs MESFETs |
SANYO |
| 349 |
SGF34 |
GaAs MESFETs |
SANYO |
| 350 |
SGF35 |
GaAs MESFETs |
SANYO |
| 351 |
TGF1350 |
Discrete MESFET |
TriQuint Semiconductor |
| 352 |
TGF1350-SCC |
Discrete MESFET |
TriQuint Semiconductor |
| | | |
