| No. |
Part Name |
Description |
Manufacturer |
| 331 |
PMR290XN |
N-channel TrenchMOS extremely low level FET |
Nexperia |
| 332 |
PMR290XN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 333 |
PMR290XN |
N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 334 |
PMR290XN |
PMR290XN; N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 335 |
PMR370XN |
N-channel TrenchMOS extremely low level FET |
Nexperia |
| 336 |
PMR370XN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 337 |
PMR370XN |
N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 338 |
PMR370XN |
PMR370XN; N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 339 |
PMV31XN |
uTrenchMOS (tm) extremely low level FET |
Philips |
| 340 |
PMV31XN |
PMV31XN; uTrenchMOS (tm) extremely low level FET |
Philips |
| 341 |
PMV56XN |
PMV56XN; uTrenchmos (tm) extremely low level FET |
Philips |
| 342 |
PMV56XN |
uTrenchmos (tm) extremely low level FET |
Philips |
| 343 |
PMV65XP |
P-channel TrenchMOS(tm) extremely low level FET |
Philips |
| 344 |
PMV65XP |
PMV65XP; P-channel TrenchMOS(tm) extremely low level FET |
Philips |
| 345 |
PMWD20XN |
PMWD20XN; Dual N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 346 |
PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET |
Philips |
| 347 |
PMZ250UN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 348 |
PMZ270XN |
N-channel TrenchMOS extremely low level FET |
Nexperia |
| 349 |
PMZ270XN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 350 |
PZTA29 |
Applications requiring extremely high current gain at collector currents to 500mA |
Fairchild Semiconductor |
| 351 |
Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply |
Siemens |
| 352 |
Q62702-C2479 |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 353 |
Q62702-C2481 |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 354 |
Q62702-F456 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 355 |
Q62702-F457 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 356 |
SMCSCONNECTOR |
Parallel Optical Links (PAROLI) - extremely short connector body |
Infineon |
| 357 |
STY16NA90 |
N - CHANNEL 900V - 0.5 Ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET |
SGS Thomson Microelectronics |
| 358 |
STY16NA90 |
N-CHANNEL 900 V - 0.5 OHM - 16 A - EXTREMELY LOW GATE CHARGE POWER MOSFET |
ST Microelectronics |
| 359 |
TC1300 |
The TC1300 combines a Low Dropout Regulator and a Microprocessor Reset Monitor in a space-saving 8-Pin MSOP package. Total supply current is 80�A (typical), 20 to 60 times lower than in bipolar regulators. The TC1300 has an extremely preci |
Microchip |
| 360 |
TC54 |
The TC54 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1uA operating current and small surface-mount packaging. Each part is laser trimmed to the desired threshold volt |
Microchip |
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