| No. |
Part Name |
Description |
Manufacturer |
| 331 |
HDSP-K513-EF500 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 332 |
HDSP-K513-FF500 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 333 |
HDSP-K513-GF500 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 334 |
HDSP-K513-HF500 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 335 |
HDSP-K513-IF500 |
Black Surface Seven Segment Displays |
Agilent (Hewlett-Packard) |
| 336 |
HEDS-9700 |
HEDS-9700#F50 · Small Optical Encoder Modules |
Agilent (Hewlett-Packard) |
| 337 |
HF50-12 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 338 |
HF50-12F |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 339 |
HF50-12S |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 340 |
HRF502 |
Silicon Schottky Barrier Diode for Rectifying |
Hitachi Semiconductor |
| 341 |
HRF502A |
Silicon Schottky Barrier Diode for Rectifying |
Hitachi Semiconductor |
| 342 |
HRF503A |
Silicon Schottky Barrier Diode for Rectifying |
Hitachi Semiconductor |
| 343 |
I74F50728D |
Synchronizing cascaded dual positive edge-triggered D-type flip-flop |
Philips |
| 344 |
I74F50728N |
Synchronizing cascaded dual positive edge-triggered D-type flip-flop |
Philips |
| 345 |
I74F50729D |
Synchronizing dual D-type flip-flop with edge-triggered set and reset with metastable immune characteristics |
Philips |
| 346 |
I74F50729N |
Synchronizing dual D-type flip-flop with edge-triggered set and reset with metastable immune characteristics |
Philips |
| 347 |
IRF500 |
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
etc |
| 348 |
IRF500C10RJ |
50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED |
etc |
| 349 |
IRFAF50 |
900V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 350 |
IRFPF50 |
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| 351 |
IRFPF50PBF |
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| 352 |
IRG4PF50W |
900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package |
International Rectifier |
| 353 |
IRG4PF50WD |
900V Warp 20-100 kHz Copack IGBT in a TO-247AC package |
International Rectifier |
| 354 |
IRG4PF50WDPBF |
900V Warp 20-100 kHz Copack IGBT in a TO-247AC package |
International Rectifier |
| 355 |
IRG4PF50WPBF |
INSULATED GATE BIPOLAR TRANSISTOR |
International Rectifier |
| 356 |
IRGPF50F |
900V Discrete IGBT in a TO-3P (TO-247AC) package |
International Rectifier |
| 357 |
K4F160411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 358 |
K4F160412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 359 |
K4F170411C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 360 |
K4F170412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
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