| No. |
Part Name |
Description |
Manufacturer |
| 331 |
BGU6005 |
Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 332 |
BGU7004 |
SiGe:C Low Noise Amplifier MMIC for GPS |
NXP Semiconductors |
| 333 |
BGU7005 |
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 334 |
BGU7007 |
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 335 |
BGU7008 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo |
NXP Semiconductors |
| 336 |
BGU8004 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 337 |
BGU8006 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 338 |
BGU8007 |
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 339 |
BGU8009 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 340 |
BGU8010 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 341 |
BGU8011 |
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 342 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 343 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 344 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 345 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 346 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 347 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 348 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 349 |
BGY13FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 350 |
BGY14D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 351 |
BGY14E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 352 |
BGY14FA1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 353 |
BGY26D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 354 |
BGY26E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 355 |
BGY26FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 356 |
BGY27DA-1D |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 357 |
BGY27DB-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 358 |
BGY27E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 359 |
BGY282 |
dual band UHF amplifier module for GSM900 and GSM1800 |
Philips |
| 360 |
BSS63 |
PNP Silicon AF and Switching Transistors (For general AF applications High breakdown voltage) |
Siemens |
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