| No. |
Part Name |
Description |
Manufacturer |
| 331 |
Q62702-F1215 |
GaAs FET (N-channel dual-gate GaAs MES FET) |
Siemens |
| 332 |
Q62702-F1391 |
GaAs MMIC (Biased Dual Gate GaAs FET) |
Siemens |
| 333 |
Q62702-F1393 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 334 |
Q62702-F1394 |
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
Siemens |
| 335 |
Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 336 |
Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 337 |
Q62702-L96 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
Siemens |
| 338 |
Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 339 |
Q62703-F106 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 340 |
Q62703-F107 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 341 |
Q62703-F108 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 342 |
Q62703-F97 |
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) |
Siemens |
| 343 |
S8850A |
MICROWAVE POWER GAAS FET |
TOSHIBA |
| 344 |
SPF-2086T |
0.1 GHz - 12 GHz low noise PHEMT GaAs FET |
Stanford Microdevices |
| 345 |
SPF-2086TK |
0.1 GHz - 4 GHz low noise PHEMT GaAs FET |
Stanford Microdevices |
| 346 |
SPF-3043 |
Low noise pHEMT GaAs FET |
Stanford Microdevices |
| 347 |
SWD-109 |
Single/quad driver for GaAs FET switche and attenuator |
MA-Com |
| 348 |
SWD-109119 |
Single/Quad Drivers for GaAs FET Switches and Attenuators |
Tyco Electronics |
| 349 |
SWD-109RTR |
Single/quad driver for GaAs FET switche and attenuator |
MA-Com |
| 350 |
SWD-109TR |
Single/quad driver for GaAs FET switche and attenuator |
MA-Com |
| 351 |
SWD-119 |
Single/quad driver for GaAs FET switche and attenuator |
MA-Com |
| 352 |
SWD-119RTR |
Single/quad driver for GaAs FET switche and attenuator |
MA-Com |
| 353 |
SWD-119TR |
Single/quad driver for GaAs FET switche and attenuator |
MA-Com |
| 354 |
TC1301 |
Low Noise and Medium Power GaAs FETs |
TRANSCOM |
| 355 |
TC2201 |
Plastic Packaged Low Noise PHEMT GaAs FETs |
TRANSCOM |
| 356 |
TCM850 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range |
Microchip |
| 357 |
TCM850 |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
| 358 |
TCM850COA |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
| 359 |
TCM850EOA |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
| 360 |
TCM851 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range |
Microchip |
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