| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2SC5338 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 332 |
2SC5379 |
Small-signal device - Small-signal transistor - High-Speed Switch�VCO and High Freq. |
Panasonic |
| 333 |
2SC5390 |
Silicon NPN Epitaxial High Frequency Amplifier |
Hitachi Semiconductor |
| 334 |
2SC5431-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 335 |
2SC5432-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 336 |
2SC5433-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 337 |
2SC5434-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 338 |
2SC5435-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 339 |
2SC5436-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 340 |
2SC5437-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 341 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 342 |
2SC5621 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 343 |
2SC5636 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 344 |
2SC5659T2L |
NPN High frequency Transistor |
ROHM |
| 345 |
2SC5661T2L |
NPN High frequency Transistor |
ROHM |
| 346 |
2SC5662T2L |
NPN High frequency Transistor |
ROHM |
| 347 |
2SC5829 |
Small-signal device - Small-signal transistor - High-Speed Switch�VCO and High Freq. |
Panasonic |
| 348 |
2SC594 |
Silicon NPN epitaxial high frequency transistor |
TOSHIBA |
| 349 |
2SC784 |
Silicon NPN epitaxial planar transistor, FM Tuner and High Frequency amplifier applications |
TOSHIBA |
| 350 |
2SC785 |
Silicon NPN epitaxial planar transistor, FM Tuner and High Frequency amplifier applications |
TOSHIBA |
| 351 |
2SC815 |
LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR |
USHA India LTD |
| 352 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 353 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 354 |
2SC942 |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 355 |
2SC942TM |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 356 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 357 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
| 358 |
2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 359 |
2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 360 |
2SK511 |
HIGH FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
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