| No. |
Part Name |
Description |
Manufacturer |
| 331 |
DS2Y-S-DC5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 332 |
DS2Y-S-DC6V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 333 |
DS2Y-S-DC9V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 334 |
DS2Y-SL2-DC1.5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 335 |
DS2Y-SL2-DC12V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 336 |
DS2Y-SL2-DC24V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 337 |
DS2Y-SL2-DC3V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 338 |
DS2Y-SL2-DC48V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 339 |
DS2Y-SL2-DC5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 340 |
DS2Y-SL2-DC6V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 341 |
DS2Y-SL2-DC9V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 342 |
ENA2048 |
Touch Sensors, Capacitance-Digital- Converter for Electrostatic Capacitive |
ON Semiconductor |
| 343 |
ENA2089 |
Capacitance-Digital-Converter IC for Electrostatic Capacitive Touch Sensors |
ON Semiconductor |
| 344 |
ENA2161 |
Capacitance-Digital-Converter IC for Electrostatic Capacitive Touch Sensors |
ON Semiconductor |
| 345 |
ENA2162 |
Capacitance-Digital-Converter IC for Electrostatic Capacitive Touch Sensors |
ON Semiconductor |
| 346 |
FPT120 |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 347 |
FPT120A |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 348 |
FPT120B |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 349 |
FPT120C |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 350 |
FPT130 |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 351 |
FPT130A |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 352 |
FPT130B |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 353 |
G7751-01 |
Active area: 0.6mm; external input voltage:+-18V; infrared detector module with preamplifier: high sensitivity module of easy-to-use. For infrared detection |
Hamamatsu Corporation |
| 354 |
GP1A15 |
High Sensing Accuracy Type OPIC Photointerrupter |
SHARP |
| 355 |
GP1A18 |
HIGH SENSITIVITY TYPE OPIC PHOTOINTERRUPTER |
SHARP |
| 356 |
GP1A35RV |
High Sensing Accuracy OPIC Photointerrupter with Encoder Functions |
SHARP |
| 357 |
GP1L01 |
High Sensitivity Type Photolnterrupter |
SHARP |
| 358 |
GP1L01F |
High Sensitivity Type Photolnterrupter |
SHARP |
| 359 |
GP1L21 |
Subminiature, High Sensitivity Photointerrupter |
SHARP |
| 360 |
GP1L22 |
Subminiature, High Sensitivity Photointerrupter |
SHARP |
| | | |
