| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2SC5177-T2 |
High fT, high gain transistor |
NEC |
| 332 |
2SC5178R |
High fT, high gain transistor |
NEC |
| 333 |
2SC5178R-T1 |
High fT, high gain transistor |
NEC |
| 334 |
2SC5178R-T2 |
High fT, high gain transistor |
NEC |
| 335 |
2SC5180-T1 |
High fT, high gain transistor |
NEC |
| 336 |
2SC5180-T2 |
High fT, high gain transistor |
NEC |
| 337 |
2SC518383R |
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
NEC |
| 338 |
2SC5183R |
High fT, high gain transistor |
NEC |
| 339 |
2SC5183R-T1 |
High fT, high gain transistor |
NEC |
| 340 |
2SC5183R-T2 |
High fT, high gain transistor |
NEC |
| 341 |
2SC522 |
Silicon NPN triple diffused high frequency, high voltage transistor |
TOSHIBA |
| 342 |
2SC524 |
Silicon NPN triple diffused high frequency, high voltage transistor |
TOSHIBA |
| 343 |
2SC5336 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 344 |
2SC5337 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 345 |
2SC5338 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
| 346 |
2SC5379 |
Small-signal device - Small-signal transistor - High-Speed Switch�VCO and High Freq. |
Panasonic |
| 347 |
2SC5390 |
Silicon NPN Epitaxial High Frequency Amplifier |
Hitachi Semiconductor |
| 348 |
2SC5431-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 349 |
2SC5432-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 350 |
2SC5433-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 351 |
2SC5434-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 352 |
2SC5435-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 353 |
2SC5436-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 354 |
2SC5437-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 355 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 356 |
2SC5621 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 357 |
2SC5636 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 358 |
2SC5659T2L |
NPN High frequency Transistor |
ROHM |
| 359 |
2SC5661T2L |
NPN High frequency Transistor |
ROHM |
| 360 |
2SC5662T2L |
NPN High frequency Transistor |
ROHM |
| | | |
