| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2SC5659T2L |
NPN High frequency Transistor |
ROHM |
| 332 |
2SC5661T2L |
NPN High frequency Transistor |
ROHM |
| 333 |
2SC5662T2L |
NPN High frequency Transistor |
ROHM |
| 334 |
2SC594 |
Silicon NPN epitaxial high frequency transistor |
TOSHIBA |
| 335 |
2SC784 |
Silicon NPN epitaxial planar transistor, FM Tuner and High Frequency amplifier applications |
TOSHIBA |
| 336 |
2SC785 |
Silicon NPN epitaxial planar transistor, FM Tuner and High Frequency amplifier applications |
TOSHIBA |
| 337 |
2SC815 |
LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR |
USHA India LTD |
| 338 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 339 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 340 |
2SC942 |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 341 |
2SC942TM |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 342 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 343 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
| 344 |
2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 345 |
2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 346 |
2SK511 |
HIGH FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 347 |
2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 348 |
2SK709 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 349 |
2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 350 |
2SK710 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 351 |
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 352 |
2SK711 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
| 353 |
3SK135A-T1 |
For UHF TV tuner high frequency amplification |
NEC |
| 354 |
3SK135A-T2 |
For UHF TV tuner high frequency amplification |
NEC |
| 355 |
3SK177-T1 |
For UHF TV tuner high frequency amplification |
NEC |
| 356 |
3SK177-T2 |
For UHF TV tuner high frequency amplification |
NEC |
| 357 |
3SK206-T1 |
UHF band high frequency amplification |
NEC |
| 358 |
3SK206-T2 |
UHF band high frequency amplification |
NEC |
| 359 |
3SK223-T1 |
UHF band high frequency amplification |
NEC |
| 360 |
3SK223-T2 |
UHF band high frequency amplification |
NEC |
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