No. |
Part Name |
Description |
Manufacturer |
331 |
HYB514100BJ-50 |
-4M x 1-Bit Dynamic RAM |
Siemens |
332 |
HYB514171BJ-50 |
256k x 16 Bit FPM DRAM 5 V 50 ns |
Infineon |
333 |
HYB514171BJ-50 |
-256k x 16-Bit Dynamic RAM |
Siemens |
334 |
HYB514171BJ-50 |
256k x 16-Bit Dynamic RAM |
Siemens |
335 |
HYB514171BJ-50 |
-256k x 16-Bit Dynamic RAM |
Siemens |
336 |
HYB514175BJ-50 |
256k x 16 Bit EDO DRAM 5 V 50 ns |
Infineon |
337 |
HYB514175BJ-50 |
-256k x 16-Bit EDO-DRAM |
Siemens |
338 |
HYB514175BJ-50 |
256k x 16-Bit EDO-DRAM |
Siemens |
339 |
HYB514175BJ-50 |
-256k x 16-Bit EDO-DRAM |
Siemens |
340 |
HYB514256BJ-50 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
341 |
HYB514265BJ-50 |
256K x 16-Bit EDO-Dynamic RAM |
Siemens |
342 |
HYB514400BJ-50 |
1M x 4 Bit FPM DRAM 5 V 50 ns |
Infineon |
343 |
HYB514400BJ-50 |
-1M x 4-Bit Dynamic RAM |
Siemens |
344 |
HYB514400BJ-50 |
1M x 4-Bit Dynamic RAM |
Siemens |
345 |
HYB514400BJ-50 |
1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
Siemens |
346 |
HYB514400BJ-50 |
-1M x 4-Bit Dynamic RAM |
Siemens |
347 |
HYB514405BJ-50 |
1M x 4 Bit EDO DRAM 5 V 50 ns |
Infineon |
348 |
HYB514405BJ-50 |
1M x 4-Bit Dynamic RAM |
Siemens |
349 |
KDA0476PJ-50 |
50MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
350 |
KM416C1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
351 |
KM416V1004CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
352 |
KM416V1204CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
353 |
KM75C104AHJ-50 |
50 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
354 |
KM75C104AJ-50 |
50 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
355 |
KM75C104ALJ-50 |
50 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
356 |
LMF60CMJ-50 |
LMF60 High Performance 6th-Order Switched Capacitor Butterworth Lowpass Filter |
National Semiconductor |
357 |
MIC10939J-50 |
V. F. Dot Matrix Display Controller |
Micrel Semiconductor |
358 |
NN5118160AJ-50 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
359 |
NN5118160ALJ-50 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
360 |
NN5118160BJ-50 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
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