| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 332 |
2N5460 |
P-channel depletion mode (Type A) junction field-effect transistor |
Motorola |
| 333 |
2N5461 |
P-channel depletion mode (Type A) junction field-effect transistor |
Motorola |
| 334 |
2N5462 |
P-channel depletion mode (Type A) junction field-effect transistor |
Motorola |
| 335 |
2N5463 |
P-channel depletion mode (Type A) junction field-effect transistor |
Motorola |
| 336 |
2N5464 |
P-channel depletion mode (Type A) junction field-effect transistor |
Motorola |
| 337 |
2N5465 |
P-channel depletion mode (Type A) junction field-effect transistor |
Motorola |
| 338 |
2N5471 |
P-channel depletion mode (Type A) junction field-effect transistor |
Motorola |
| 339 |
2N5472 |
P-channel depletion mode (Type A) junction field-effect transistor |
Motorola |
| 340 |
2N5473 |
P-channel depletion mode (Type A) junction field-effect transistor |
Motorola |
| 341 |
2N5474 |
P-channel depletion mode (Type A) junction field-effect transistor |
Motorola |
| 342 |
2N5475 |
P-channel depletion mode (Type A) junction field-effect transistor |
Motorola |
| 343 |
2N5476 |
P-channel depletion mode (Type A) junction field-effect transistor |
Motorola |
| 344 |
2N5484 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 345 |
2N5485 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 346 |
2N5486 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 347 |
2N5496 |
50.000W General Purpose NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 20 - 100 hFE |
Continental Device India Limited |
| 348 |
2N5550 |
0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE |
Continental Device India Limited |
| 349 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
| 350 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 351 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 352 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 353 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 354 |
2N5770 |
0.350W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.050A Ic, 50 - 200 hFE |
Continental Device India Limited |
| 355 |
2N6034 |
W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
| 356 |
2N6036 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. |
Continental Device India Limited |
| 357 |
2N6037 |
40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
| 358 |
2N6038 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
| 359 |
2N6039 |
W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
| 360 |
2N6101 |
75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
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