| No. |
Part Name |
Description |
Manufacturer |
| 331 |
NE345L-10B |
0.1-4.0 GHz, 10 W, L,S-band power GaAs MESFET |
NEC |
| 332 |
P4C1981L-10JC |
10 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 333 |
P4C1981L-10PC |
10 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 334 |
P4C1982L-10JC |
10 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 335 |
P4C1982L-10PC |
10 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 336 |
P4C198AL-10PC |
10 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 337 |
P4C198L-10PC |
10 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
| 338 |
PAL16L-102DC |
20-PIN TTL PROGRAMMABLE ARRAY LOGIC |
Advanced Micro Devices |
| 339 |
PAL16L-102JC |
20-PIN TTL PROGRAMMABLE ARRAY LOGIC |
Advanced Micro Devices |
| 340 |
PAL16L-102PC |
20-PIN TTL PROGRAMMABLE ARRAY LOGIC |
Advanced Micro Devices |
| 341 |
PAL16L-10DC |
20-PIN TTL PROGRAMMABLE ARRAY LOGIC |
Advanced Micro Devices |
| 342 |
PAL16L-10JC |
20-PIN TTL PROGRAMMABLE ARRAY LOGIC |
Advanced Micro Devices |
| 343 |
PAL16L-10PC |
20-PIN TTL PROGRAMMABLE ARRAY LOGIC |
Advanced Micro Devices |
| 344 |
PALCE16V8L-10JC |
Flash-Erasable Reprogrammable CMOS PAL Device |
Cypress |
| 345 |
PALCE16V8L-10JI |
Flash-Erasable Reprogrammable CMOS PAL Device |
Cypress |
| 346 |
PALCE16V8L-10PC |
Flash-Erasable Reprogrammable CMOS PAL Device |
Cypress |
| 347 |
PALCE16V8L-10PI |
Flash-Erasable Reprogrammable CMOS PAL Device |
Cypress |
| 348 |
PL-1061 |
Mobile computing system: MIPS R3000 compatible 32-bit RISC core with MAC co-processor running at maximum speed of 100MHz |
Prolific |
| 349 |
SPD30N03S2L-10 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL |
Infineon |
| 350 |
SPU30N03S2L-10 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, IPAK, RDSon = 10.0mOhm, 30A, LL |
Infineon |
| 351 |
STB60N03L-10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 352 |
STB60N03L-10 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
ST Microelectronics |
| 353 |
STB60NE03L-10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 354 |
STB60NE03L-10 |
N - CHANNEL ENHANCEMENT MODE � SINGLE FEATURE SIZE] � POWER MOSFET |
SGS Thomson Microelectronics |
| 355 |
STB60NE03L-10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 356 |
STP60NE03L-10 |
N - CHANNEL ENHANCEMENT MODE � SINGLE FEATURE SIZE] � POWER MOSFET |
SGS Thomson Microelectronics |
| 357 |
STP60NE03L-10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 358 |
TC514100AAZL-10 |
4,194,304 WORD x BIT DYNAMIC RAM |
TOSHIBA |
| 359 |
TC514100AJL-10 |
4,194,304 WORD x BIT DYNAMIC RAM |
TOSHIBA |
| 360 |
TC514100APL-10 |
4,194,304 WORD x BIT DYNAMIC RAM |
TOSHIBA |
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