| No. |
Part Name |
Description |
Manufacturer |
| 331 |
IC42S81600L-6TI |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Circuit Solution Inc |
| 332 |
IC42S81600L-6TI(G) |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Circuit Solution Inc |
| 333 |
IC42S81600L-6TIG |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Circuit Solution Inc |
| 334 |
K4E640812B-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 335 |
K4E640812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 336 |
K4E640812C-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 337 |
K4E640812C-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 338 |
K4E660812B-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 339 |
K4E660812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 340 |
K4E660812C-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 341 |
K4E660812C-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 342 |
KDA0471PL-66 |
66MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
| 343 |
KDA0476PL-66 |
66MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
| 344 |
KDA0478PL-66 |
66MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing |
Samsung Electronic |
| 345 |
KM416C1000BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 346 |
KM416C1000BTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 347 |
KM416C1000CJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 348 |
KM416C1000CTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 349 |
KM416C1004CJL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 350 |
KM416C1004CTL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 351 |
KM416C1200BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 352 |
KM416C1200BTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 353 |
KM416C1200CJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 354 |
KM416C1200CTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 355 |
KM416C1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 356 |
KM416C1204CTL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 357 |
KM416C254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
| 358 |
KM416C254DTL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
| 359 |
KM416V1000BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 360 |
KM416V1000BTL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
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