No. |
Part Name |
Description |
Manufacturer |
331 |
IRKDL450-20S20 |
2000V Fast Recovery Diode in a Super MAGN-A-Pak package |
International Rectifier |
332 |
IRKDL450-25S20 |
2500V Fast Recovery Diode in a Super MAGN-A-Pak package |
International Rectifier |
333 |
IRKDL45016S20 |
Standard diode |
International Rectifier |
334 |
IRKDL45020S20 |
Standard diode |
International Rectifier |
335 |
IRKDL45025S20 |
Standard diode |
International Rectifier |
336 |
ISL45041 |
TFT-LCD I2C Programmable VCOM Calibrator |
Intersil |
337 |
ISL45042 |
LCD Module Calibrator |
Intersil |
338 |
ISL45042A |
LCD Module Calibrator |
Intersil |
339 |
K4D623238B-GC/L45 |
64Mbit DDR SDRAM |
Samsung Electronic |
340 |
K4E641612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
341 |
K4E641612C-TL45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
342 |
K4E661612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
343 |
K4E661612C-L45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
344 |
K4E661612C-TL45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
345 |
K4F641612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
346 |
K4F641612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
347 |
K4F661612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
348 |
K4F661612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
349 |
K4G323222A-PC/L45 |
32Mbit SGRAM |
Samsung Electronic |
350 |
K4G323222A-QC/L45 |
32Mbit SGRAM |
Samsung Electronic |
351 |
K4S643232E-TL45 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
352 |
K4S643232F-TL45 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
353 |
KM416C1004BJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
354 |
KM416C1004BT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
355 |
KM416C1004CJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
356 |
KM416C1004CT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
357 |
KM416C1204BJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
358 |
KM416C1204BT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
359 |
KM416C1204CJ-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
360 |
KM416C1204CT-L45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
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