| No. |
Part Name |
Description |
Manufacturer |
| 331 |
ATR0610-PQQ |
2.7 V GPS LOW NOISE AMPLIFIER |
Atmel |
| 332 |
BCY58 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
| 333 |
BCY59 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
| 334 |
BCY77 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
| 335 |
BCY78 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
| 336 |
BCY79 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
| 337 |
BF272S |
Epitaxial planar PNP transistor designed for UHF-VHF low noise amplifier, high gain, low feedback capacitance |
SGS-ATES |
| 338 |
BFP420 |
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) |
Siemens |
| 339 |
BFP520 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
| 340 |
BFR16 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
| 341 |
BFR17 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
| 342 |
BFR340F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators |
Infineon |
| 343 |
BFR340L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 344 |
BFR340T |
RF-Bipolar - NPN Silicon RF transistor in SC75 package ideal for Low Noise Amplifiers and Oscillators |
Infineon |
| 345 |
BFR460L3E6327 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 346 |
BFS460L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 347 |
BFS466L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 348 |
BFS469L6E6327 |
RF-Bipolar - Dual NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules |
Infineon |
| 349 |
BFX31 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
| 350 |
BFX37 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
| 351 |
BFY76 |
Transistor for low-level and low noise amplifiers |
SGS-ATES |
| 352 |
BGA2011 |
900 MHz high linear low noise amplifier |
NXP Semiconductors |
| 353 |
BGA2011 |
900 MHz high linear low noise amplifier |
Philips |
| 354 |
BGA2012 |
1900 MHz high linear low noise amplifier |
NXP Semiconductors |
| 355 |
BGA2012 |
1900 MHz high linear low noise amplifier |
Philips |
| 356 |
BGA622 |
Silicon MMICs - SiGe Ultra Low Noise Amplifier G = 15dB, NF=1.1dB, 50Ohm, SOT343 |
Infineon |
| 357 |
BGA622GPS |
GPS Low Noise Amplifier using BGA622 |
Infineon |
| 358 |
BGB540LNA |
BGB540 as a 1.85 GHz Low Noise Amplifier |
Infineon |
| 359 |
BGU6005 |
Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass |
NXP Semiconductors |
| 360 |
BGU7003 |
Wideband silicon germanium low noise amplifier MMIC |
NXP Semiconductors |
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