| No. |
Part Name |
Description |
Manufacturer |
| 331 |
SM320VC33GNMM150 |
EP - Military Enhanced Plastic Digital Signal Processor |
Texas Instruments |
| 332 |
SM320VC33GNMM150 |
EP - Military Enhanced Plastic Digital Signal Processor |
Texas Instruments |
| 333 |
SM320VC33GNMM150EP |
EP - Military Enhanced Plastic Digital Signal Processor |
Texas Instruments |
| 334 |
SM320VC33GNMM150EP |
EP - Military Enhanced Plastic Digital Signal Processor |
Texas Instruments |
| 335 |
SMJ320F2812HFGM150 |
Military Digital Signal Processor 172-CFP -55 to 125 |
Texas Instruments |
| 336 |
SMJ320VC33HFGM150 |
Digital Signal Processor |
Texas Instruments |
| 337 |
TCM1501B |
Telephone Tone Ringer Drivers 8-PDIP |
Texas Instruments |
| 338 |
TCM1501BP |
Telephone Tone Ringer Drivers 8-PDIP |
Texas Instruments |
| 339 |
TCM1506B |
Telephone Tone Ringer Drivers 8-PDIP |
Texas Instruments |
| 340 |
TCM1506BP |
Telephone Tone Ringer Drivers 8-PDIP |
Texas Instruments |
| 341 |
TDM150 |
Twin Diode Module |
Microsemi |
| 342 |
TDM15002 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 343 |
TDM15004 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 344 |
TDM15006 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 345 |
TDM15008 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 346 |
TDM15010 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 347 |
TDM15012 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 348 |
TDM15014 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 349 |
TDM15016 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 350 |
TM150SA-6 |
THYRISTOR MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 351 |
TM150XG-26L09A |
Lcd module size: 331.6(W) x 254.75(H) x 12.5(T) mm; resolution: 1024 x RGB(W) x 768(H); -0.3 to 4V; TFT color LCD module |
SANYO |
| 352 |
TSD4M150 |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 353 |
TSD4M150F |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 354 |
TSD4M150F |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 355 |
TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits |
SGS Thomson Microelectronics |
| 356 |
TSD4M150V |
N-CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE |
ST Microelectronics |
| 357 |
V375A12M150A |
375Vin / 24Vout / 150Watts DC-DC Converter Module |
Vicor Corporation |
| 358 |
V375A24M150A |
375Vin / 24Vout / 150Watts DC-DC Converter Module |
Vicor Corporation |
| 359 |
V375B12M150A |
375Vin / 24Vout / 150Watts DC-DC Converter Module |
Vicor Corporation |
| 360 |
V375B24M150A |
375Vin / 24Vout / 150Watts DC-DC Converter Module |
Vicor Corporation |
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