DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for MICROELECTRON

Datasheets found :: 109215
Page: | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 |
No. Part Name Description Manufacturer
331 1N5908RL TRANSIL ST Microelectronics
332 1N6263 SMALL SIGNAL SCHOTTKY DIODE SGS Thomson Microelectronics
333 1N6263 SMALL SIGNAL SCHOTTKY DIODE SGS Thomson Microelectronics
334 1N6263 SMALL SIGNAL SCHOTTKY DIODE ST Microelectronics
335 1N6640U Aerospace 0.3 A 75 V switching diode ST Microelectronics
336 1N6640U01D Aerospace 0.3 A 75 V switching diode ST Microelectronics
337 1N6640U02D Aerospace 0.3 A 75 V switching diode ST Microelectronics
338 1N6640UD1 Aerospace 0.3 A 75 V switching diode ST Microelectronics
339 1N6642U Aerospace 0.3 A -100 V switching diode ST Microelectronics
340 1N6642U01D Aerospace 0.3 A -100 V switching diode ST Microelectronics
341 1N6642U02D Aerospace 0.3 A -100 V switching diode ST Microelectronics
342 1N6642UD1 Aerospace 0.3 A -100 V switching diode ST Microelectronics
343 2001 2GHz 1W 28V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
344 2003 2GHz 3W 28V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
345 2005 2GHz 5W 28V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
346 2010 2GHz 10W 28V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
347 2023-1 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
348 2023-16 2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
349 2023-3 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
350 2023-6 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
351 2023-6 2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
352 2028-771196-000 Synchronous rectification with inhibit, 0.7 A, 1.7 MHz adjustable, step-down switching regulator ST Microelectronics
353 20L08 2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
354 20L15 2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
355 2100 2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance SGS Thomson Microelectronics
356 210007039-002 350mWAudio Power Amplifier with Shutdown Mode Chengdu Sino Microelectronics System
357 2223-10 2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics
358 2223-14 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
359 2223-18 2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics
360 2223-3 2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics


Datasheets found :: 109215
Page: | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 |



© 2024 - www Datasheet Catalog com