| No. |
Part Name |
Description |
Manufacturer |
| 331 |
1S2075K |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 332 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
| 333 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| 334 |
1S2090 |
Silicon Epitaxial Planar Diode, intended for use in UHF/VHF TV Tuner AFC |
Hitachi Semiconductor |
| 335 |
1S2091 |
Silicon epitaxial planar diode, Phase Detector Application for color TV |
TOSHIBA |
| 336 |
1S2092 |
Silicon epitaxial planar type diode. |
Panasonic |
| 337 |
1S2092 |
SILICON EPTAXIAL PLANAR TYPE |
TOSHIBA |
| 338 |
1S2094 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 339 |
1S2095A |
Silicon epitaxial planar type diode. |
Panasonic |
| 340 |
1S2095A |
SILICON EPITAXIAL PLANAR TYPE DIODE |
TOSHIBA |
| 341 |
1S2186 |
Silicon epitaxial planar type diode. |
Panasonic |
| 342 |
1S2186 |
SILICON EPITAXIAL PLANAR TYPE |
TOSHIBA |
| 343 |
1S2187 |
Silicon epitaxial schottky barrier mixer diode, UHF Mixer Application |
TOSHIBA |
| 344 |
1S2236 |
Silicon epitaxial planar type variable capacitance diode. |
Panasonic |
| 345 |
1S2236 |
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE |
TOSHIBA |
| 346 |
1SS110 |
Silicon Epitaxial Planar Diode for Tuner Band Switch |
Hitachi Semiconductor |
| 347 |
1SS118 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 348 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
| 349 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 350 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 351 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 352 |
1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 353 |
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 354 |
1SS196 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 355 |
1SS200 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 356 |
1SS201 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 357 |
1SS226 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 358 |
1SS250 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 359 |
1SS271 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE VHF~UHF MIXER APPLICATION |
TOSHIBA |
| 360 |
1SS272 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
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