No. |
Part Name |
Description |
Manufacturer |
331 |
1N5526CUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
332 |
1N5526D |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
333 |
1N5526D |
Diode Zener Single 6.8V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
334 |
1N5526D-1 |
Low Voltage Avalanche Zener |
Microsemi |
335 |
1N5526D-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
336 |
1N5526DUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
337 |
1N5526DUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
338 |
1N5527 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
339 |
1N5527 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
340 |
1N5527 |
Low Voltage Avalanche Zener |
Microsemi |
341 |
1N5527 |
Diode Zener Single 7.5V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
342 |
1N5527A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
343 |
1N5527A |
Low Voltage Avalanche Zener |
Microsemi |
344 |
1N5527A |
Diode Zener Single 7.5V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
345 |
1N5527A-1 |
Low Voltage Avalanche Zener |
Microsemi |
346 |
1N5527A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
347 |
1N5527AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
348 |
1N5527AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
349 |
1N5527B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
350 |
1N5527B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
351 |
1N5527B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
352 |
1N5527B |
Low Voltage Avalanche Zener |
Microsemi |
353 |
1N5527B |
Low Voltage Avalanche Zener |
Microsemi |
354 |
1N5527B |
Diode Zener Single 7.5V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
355 |
1N5527B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
356 |
1N5527B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
357 |
1N5527B-1 |
Low Voltage Avalanche Zener |
Microsemi |
358 |
1N5527B-1 |
Diode Zener Single 7.5V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
359 |
1N5527B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
360 |
1N5527BUR |
Zener Voltage Regulator Diode |
Microsemi |
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