| No. |
Part Name |
Description |
Manufacturer |
| 331 |
1N750 |
500 mW silicon linear diode. Max zener impedance 19.0 Ohm, max zener voltage 4.7 V (Iz 20mA). |
Fairchild Semiconductor |
| 332 |
1N750A |
4.7 V, 400 mW silicon linear diode |
BKC International Electronics |
| 333 |
1N751 |
5.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 334 |
1N751 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 335 |
1N751A |
5.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 336 |
1N752 |
5.6 V, 400 mW silicon linear diode |
BKC International Electronics |
| 337 |
1N752 |
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA). |
Fairchild Semiconductor |
| 338 |
1N752A |
5.6 V, 400 mW silicon linear diode |
BKC International Electronics |
| 339 |
1N753 |
6.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 340 |
1N753 |
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA). |
Fairchild Semiconductor |
| 341 |
1N753A |
6.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 342 |
1N754 |
6.8 V, 400 mW silicon linear diode |
BKC International Electronics |
| 343 |
1N754 |
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). |
Fairchild Semiconductor |
| 344 |
1N754A |
6.8 V, 400 mW silicon linear diode |
BKC International Electronics |
| 345 |
1N755 |
7.5 V, 400 mW silicon linear diode |
BKC International Electronics |
| 346 |
1N755 |
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). |
Fairchild Semiconductor |
| 347 |
1N755A |
7.5 V, 400 mW silicon linear diode |
BKC International Electronics |
| 348 |
1N756 |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 349 |
1N756 |
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). |
Fairchild Semiconductor |
| 350 |
1N756A |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 351 |
1N757 |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 352 |
1N757 |
500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 353 |
1N757A |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 354 |
1N758 |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
| 355 |
1N758 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 356 |
1N758A |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
| 357 |
1N759 |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
| 358 |
1N759 |
500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). |
Fairchild Semiconductor |
| 359 |
1N759A |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
| 360 |
1N81 |
Germanium diode |
IPRS Baneasa |
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