| No. |
Part Name |
Description |
Manufacturer |
| 331 |
1N5908 |
TRANSIL |
ST Microelectronics |
| 332 |
1N5908RL |
TRANSIL |
ST Microelectronics |
| 333 |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE |
SGS Thomson Microelectronics |
| 334 |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE |
SGS Thomson Microelectronics |
| 335 |
1N6263 |
SMALL SIGNAL SCHOTTKY DIODE |
ST Microelectronics |
| 336 |
1N6264 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 337 |
1N6265 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 338 |
1N6266 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 339 |
1N6640U |
Aerospace 0.3 A 75 V switching diode |
ST Microelectronics |
| 340 |
1N6640U01D |
Aerospace 0.3 A 75 V switching diode |
ST Microelectronics |
| 341 |
1N6640U02D |
Aerospace 0.3 A 75 V switching diode |
ST Microelectronics |
| 342 |
1N6640UD1 |
Aerospace 0.3 A 75 V switching diode |
ST Microelectronics |
| 343 |
1N6642U |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 344 |
1N6642U01D |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 345 |
1N6642U02D |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 346 |
1N6642UD1 |
Aerospace 0.3 A -100 V switching diode |
ST Microelectronics |
| 347 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 348 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 349 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 350 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 351 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 352 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 353 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 354 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 355 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 356 |
2028-771196-000 |
Synchronous rectification with inhibit, 0.7 A, 1.7 MHz adjustable, step-down switching regulator |
ST Microelectronics |
| 357 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 358 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 359 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 360 |
210007039-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
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