No. |
Part Name |
Description |
Manufacturer |
331 |
IDT79RV4640133MU |
LOW-COST EMBEDDED ORION RISC MICROPROCESSOR |
IDT |
332 |
IDT79RV4640133MUI |
LOW-COST EMBEDDED ORION RISC MICROPROCESSOR |
IDT |
333 |
IDT79RV4640150DU |
LOW-COST EMBEDDED ORION RISC MICROPROCESSOR |
IDT |
334 |
IDT79RV4640150DUI |
LOW-COST EMBEDDED ORION RISC MICROPROCESSOR |
IDT |
335 |
IDT79RV4640150MU |
LOW-COST EMBEDDED ORION RISC MICROPROCESSOR |
IDT |
336 |
IDT79RV4640150MUI |
LOW-COST EMBEDDED ORION RISC MICROPROCESSOR |
IDT |
337 |
IDT79RV464080DU |
LOW-COST EMBEDDED ORION RISC MICROPROCESSOR |
IDT |
338 |
IDT79RV464080DUI |
LOW-COST EMBEDDED ORION RISC MICROPROCESSOR |
IDT |
339 |
IDT79RV464080MU |
LOW-COST EMBEDDED ORION RISC MICROPROCESSOR |
IDT |
340 |
IDT79RV464080MUI |
LOW-COST EMBEDDED ORION RISC MICROPROCESSOR |
IDT |
341 |
IDT79RV4650100MS |
EMBEDDED 64-BIT ORION RISC MICROPROCESSOR |
IDT |
342 |
IDT79RV4650133MS |
EMBEDDED 64-BIT ORION RISC MICROPROCESSOR |
IDT |
343 |
IDT79RV465080MS |
EMBEDDED 64-BIT ORION RISC MICROPROCESSOR |
IDT |
344 |
KSA1010 |
-100 V, -15 A, PNP epitaxial silicon transistor |
Samsung Electronic |
345 |
KSA1220 |
-120 V, -1.2 A, PNP epitaxial silicon transistor |
Samsung Electronic |
346 |
KSA1220A |
-120 V, -1.2 A, PNP epitaxial silicon transistor |
Samsung Electronic |
347 |
KSA614 |
-80 V, -3 A, PNP epitaxial silicon transistor |
Samsung Electronic |
348 |
KSA634 |
-40 V, -2 A, PNP epitaxial silicon transistor |
Samsung Electronic |
349 |
KSA940 |
-150 V, -1.5 A, PNP epitaxial silicon transistor |
Samsung Electronic |
350 |
KSB596 |
-80 V, -4 A, PNP epitaxial silicon transistor |
Samsung Electronic |
351 |
KSC1096 |
40 V, 2 A, PNP epitaxial silicon transistor |
Samsung Electronic |
352 |
KSC1173 |
30 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
353 |
KSC1507 |
300 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
354 |
KSC1520A |
300 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
355 |
KSC1983 |
80 V, 3 A, NPN epitaxial silicon transistor |
Samsung Electronic |
356 |
KSC2233 |
200 V, 4 A, NPN epitaxial silicon transistor |
Samsung Electronic |
357 |
KSC2333 |
500 V, 2 A, NPN epitaxial silicon transistor |
Samsung Electronic |
358 |
KSC2335 |
500 V, 7 A, NPN epitaxial silicon transistor |
Samsung Electronic |
359 |
KSC2518 |
500 V, 4 A, NPN epitaxial silicon transistor |
Samsung Electronic |
360 |
KSC2688 |
300 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
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