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Datasheets found :: 821
Page: | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 |
No. Part Name Description Manufacturer
331 IDT79RV4640133MU LOW-COST EMBEDDED ORION RISC MICROPROCESSOR IDT
332 IDT79RV4640133MUI LOW-COST EMBEDDED ORION RISC MICROPROCESSOR IDT
333 IDT79RV4640150DU LOW-COST EMBEDDED ORION RISC MICROPROCESSOR IDT
334 IDT79RV4640150DUI LOW-COST EMBEDDED ORION RISC MICROPROCESSOR IDT
335 IDT79RV4640150MU LOW-COST EMBEDDED ORION RISC MICROPROCESSOR IDT
336 IDT79RV4640150MUI LOW-COST EMBEDDED ORION RISC MICROPROCESSOR IDT
337 IDT79RV464080DU LOW-COST EMBEDDED ORION RISC MICROPROCESSOR IDT
338 IDT79RV464080DUI LOW-COST EMBEDDED ORION RISC MICROPROCESSOR IDT
339 IDT79RV464080MU LOW-COST EMBEDDED ORION RISC MICROPROCESSOR IDT
340 IDT79RV464080MUI LOW-COST EMBEDDED ORION RISC MICROPROCESSOR IDT
341 IDT79RV4650100MS EMBEDDED 64-BIT ORION RISC MICROPROCESSOR IDT
342 IDT79RV4650133MS EMBEDDED 64-BIT ORION RISC MICROPROCESSOR IDT
343 IDT79RV465080MS EMBEDDED 64-BIT ORION RISC MICROPROCESSOR IDT
344 KSA1010 -100 V, -15 A, PNP epitaxial silicon transistor Samsung Electronic
345 KSA1220 -120 V, -1.2 A, PNP epitaxial silicon transistor Samsung Electronic
346 KSA1220A -120 V, -1.2 A, PNP epitaxial silicon transistor Samsung Electronic
347 KSA614 -80 V, -3 A, PNP epitaxial silicon transistor Samsung Electronic
348 KSA634 -40 V, -2 A, PNP epitaxial silicon transistor Samsung Electronic
349 KSA940 -150 V, -1.5 A, PNP epitaxial silicon transistor Samsung Electronic
350 KSB596 -80 V, -4 A, PNP epitaxial silicon transistor Samsung Electronic
351 KSC1096 40 V, 2 A, PNP epitaxial silicon transistor Samsung Electronic
352 KSC1173 30 V, 3 A, NPN epitaxial silicon transistor Samsung Electronic
353 KSC1507 300 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic
354 KSC1520A 300 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic
355 KSC1983 80 V, 3 A, NPN epitaxial silicon transistor Samsung Electronic
356 KSC2233 200 V, 4 A, NPN epitaxial silicon transistor Samsung Electronic
357 KSC2333 500 V, 2 A, NPN epitaxial silicon transistor Samsung Electronic
358 KSC2335 500 V, 7 A, NPN epitaxial silicon transistor Samsung Electronic
359 KSC2518 500 V, 4 A, NPN epitaxial silicon transistor Samsung Electronic
360 KSC2688 300 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic


Datasheets found :: 821
Page: | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 |



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