| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
| 332 |
2N930 |
TRANSISTOR |
SGS Thomson Microelectronics |
| 333 |
2SC1260 |
NPN silicon microwave transistor (This datasheet of NE87112 is also the datasheet of 2SC1260, see the Electrical Characteristics table) |
NEC |
| 334 |
2SC2150 |
NPN silicon microwave transistor (This datasheet of NE57835 is also the datasheet of 2SC2150, see the Electrical Characteristics table) |
NEC |
| 335 |
2SD1398 |
RF & microwave transistor 850-960 MHz applications, 24 volts, 53W |
SGS Thomson Microelectronics |
| 336 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
SGS Thomson Microelectronics |
| 337 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
| 338 |
3003 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 339 |
3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 340 |
308 |
Variable Compression Mica Padders |
Arco Electronics |
| 341 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 342 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 343 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 344 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 345 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 346 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 347 |
3510VM/MIL |
Detailed specification microcircuits, linear operational amplifier monolithic, silicon |
Burr Brown |
| 348 |
40 |
1620 nm DFB Laser for Supervisory Channel Applications |
Ericsson Microelectronics |
| 349 |
4000 |
Common base silicon NPN microwave power transistor featuring a unique Microgrid™ structure |
SGS Thomson Microelectronics |
| 350 |
4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 351 |
4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
| 352 |
4027 |
DUAL-J-K MASTER-SLAVE FLIP-FLOP |
SGS Thomson Microelectronics |
| 353 |
405 |
NPN Silicon RF Transistor |
SGS Thomson Microelectronics |
| 354 |
4066 |
QUAD BILATERAL SWITCH FOR TRANSMISSION OR MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS |
SGS Thomson Microelectronics |
| 355 |
420 |
NPN Silicon RF Transistor |
SGS Thomson Microelectronics |
| 356 |
486DX-CORE |
FULLY STATIC 3.3V 486 ASIC CORE |
SGS Thomson Microelectronics |
| 357 |
5962R0923561VZA |
Precision Micropower Shunt Voltage Reference 10-CFP -55 to 125 |
Texas Instruments |
| 358 |
7001 |
900 MHz THREE GAIN LEVEL LNA |
SGS Thomson Microelectronics |
| 359 |
7002 |
1.8GHz THREE GAIN LEVEL LNA |
SGS Thomson Microelectronics |
| 360 |
7003 |
TRI-BAND GSM/DCS/PCS LNA |
SGS Thomson Microelectronics |
| | | |
