| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2SB507 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 332 |
2SB507D |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
| 333 |
2SB508 |
PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE |
SANYO |
| 334 |
2SB509 |
For AF Power Amplifier Use |
Unknow |
| 335 |
2SB511 |
LOW FREQUENCY POWER AMP APPLICATIONS |
Unknow |
| 336 |
2SB514 |
PNP Triple Diffused Planar Silicon Transistors 50V/2A Low-Frequency Power Amplifier Applications |
SANYO |
| 337 |
2SB515 |
Low Frequency Power Amp Applications |
SANYO |
| 338 |
2SB536 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 339 |
2SB536 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 340 |
2SB537 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 341 |
2SB537 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
| 342 |
2SB539A |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 343 |
2SB539B |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 344 |
2SB539C |
Audio frequency power amplifier silicon triple diffused MESA transistor |
NEC |
| 345 |
2SB541 |
Audio frequency power amplifier PNP/NPN silicon triple diffused MESA transistor |
NEC |
| 346 |
2SB544 |
Low-Frequency Power Amp / Electronic Governor Applications |
SANYO |
| 347 |
2SB548 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
NEC |
| 348 |
2SB548 |
Audio Frequency Power Amplifier |
Unknow |
| 349 |
2SB554 |
Power Amplifier Applications |
TOSHIBA |
| 350 |
2SB559 |
Low Frequency Power Amp, Medium Speed Switching Applications |
Unknow |
| 351 |
2SB56 |
Germanium PNP alloy junction transistor, audio low power amplifier applications |
TOSHIBA |
| 352 |
2SB560 |
Low-Frequency Power Amp Applications |
SANYO |
| 353 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
| 354 |
2SB595 |
Silicon PNP triple diffused power amplifier |
TOSHIBA |
| 355 |
2SB595 |
LOW FREQUENCY POWER AMPLIFIER(PNP EPITAXUAL) |
Wing Shing Computer Components |
| 356 |
2SB596 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 357 |
2SB598 |
FOR AUDIO FREQUENCY POWER AMP, CONVERTERS, ELECTRONIC GOVERNORS |
SANYO |
| 358 |
2SB600 |
Audio frequency power amplifier silicon triple diffused transistor |
NEC |
| 359 |
2SB624 |
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 360 |
2SB624R |
PNP silicon epitaxial transistor designed for use in audio frequency power amplifiers |
NEC |
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