| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2SK3494 |
Power Device - Power MOS FETs |
Panasonic |
| 332 |
2SK3628 |
Power Device - Power MOS FETs |
Panasonic |
| 333 |
2SK3636 |
Power Device - Power MOS FETs |
Panasonic |
| 334 |
2SK3637 |
Power Device - Power MOS FETs |
Panasonic |
| 335 |
2SK3652 |
Power Device - Power MOS FETs |
Panasonic |
| 336 |
2SK3723 |
Power Device - Power MOS FETs |
Panasonic |
| 337 |
2SK3731 |
Power Device - Power MOS FETs |
Panasonic |
| 338 |
2SK612 |
V(dss): 100V; 20W; fast switching N-channel silicon power MOS FET. For industrial use |
NEC |
| 339 |
2SK707 |
Fast switching N-channel silicon power MOS FET. |
NEC |
| 340 |
2SK720A |
Fast switching N-channel silicon power MOS FET. |
NEC |
| 341 |
2SK735 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET |
NEC |
| 342 |
2SK787 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET |
NEC |
| 343 |
2SK810 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET |
NEC |
| 344 |
2SK819 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET |
NEC |
| 345 |
2SK823 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET |
NEC |
| 346 |
2SK827 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET |
NEC |
| 347 |
2SK854 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET |
NEC |
| 348 |
4AJ11 |
Silicon P-Channel Power MOS FET Array |
Hitachi Semiconductor |
| 349 |
4AK26 |
Silicon N-Channel Power MOS FET Array |
Hitachi Semiconductor |
| 350 |
4AM11 |
Silicon N-Channel/P-Channel Power MOS FET Array |
Hitachi Semiconductor |
| 351 |
4AM15 |
Silicon N-Channel/P-Channel Power MOS FET Array |
Hitachi Semiconductor |
| 352 |
6AM13 |
Silicon N-Channel/P-Channel Complementary Power MOS FET Array |
Hitachi Semiconductor |
| 353 |
6AM14 |
Silicon N-Channel/P-Channel Power MOS FET Array |
Hitachi Semiconductor |
| 354 |
APL1001J |
POWER MOS IV 1000V 18.0A 0.60 Ohm |
Advanced Power Technology |
| 355 |
APL1001P |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000V 18.0A 0.60OHM |
Advanced Power Technology |
| 356 |
APL501J |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500V 43.0A 0.12Ohm |
Advanced Power Technology |
| 357 |
APL501P |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500V 43.0A 0.12 OHM |
Advanced Power Technology |
| 358 |
APPLICATION-NOTE |
4V Gate-Driven Power MOS FET With Low drain to source ON-STATE Resistance Application Note |
NEC |
| 359 |
APT1001R1AVR |
POWER MOS V 1000V 9A 1.100 Ohm |
Advanced Power Technology |
| 360 |
APT1001R1BN |
POWER MOS IV 1000V 10.5A 1.10 Ohm / 1000V 10.0A 1.30 Ohm |
Advanced Power Technology |
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