No. |
Part Name |
Description |
Manufacturer |
331 |
BFX30 |
Silicon p-n-p medium power transistor |
Mullard |
332 |
BFX87 |
Silicon p-n-p medium power transistor |
Mullard |
333 |
BFX88 |
Silicon p-n-p medium power transistor |
Mullard |
334 |
BSP31 |
60 V, 1 A PNP medium power transistor |
Nexperia |
335 |
BSP31 |
60 V, 1 A PNP medium power transistor |
NXP Semiconductors |
336 |
BSP31 |
PNP medium power transistors |
Philips |
337 |
BSP32 |
80 V, 1 A PNP medium power transistor |
Nexperia |
338 |
BSP32 |
80 V, 1 A PNP medium power transistor |
NXP Semiconductors |
339 |
BSP32 |
PNP medium power transistors |
Philips |
340 |
BSP33 |
80 V, 1 A PNP medium power transistor |
Nexperia |
341 |
BSP33 |
80 V, 1 A PNP medium power transistor |
NXP Semiconductors |
342 |
BSP33 |
PNP medium power transistors |
Philips |
343 |
BSR30 |
60 V, 1 A PNP medium power transistor |
Nexperia |
344 |
BSR30 |
60 V, 1 A PNP medium power transistor |
NXP Semiconductors |
345 |
BSR30 |
PNP medium power transistors |
Philips |
346 |
BSR31 |
60 V, 1 A PNP medium power transistor |
Nexperia |
347 |
BSR31 |
60 V, 1 A PNP medium power transistor |
NXP Semiconductors |
348 |
BSR31 |
PNP medium power transistors |
Philips |
349 |
BSR33 |
80V PNP MEDIUM POWER TRANSISTOR IN SOT89 |
Diodes |
350 |
BSR33 |
80 V, 1 A PNP medium power transistor |
Nexperia |
351 |
BSR33 |
80 V, 1 A PNP medium power transistor |
NXP Semiconductors |
352 |
BSR33 |
PNP medium power transistors |
Philips |
353 |
BSR33 |
PNP medium power transistors 60 to 100 Volts |
Zetex Semiconductors |
354 |
BSR33TA |
80V PNP MEDIUM POWER TRANSISTOR IN SOT89 |
Diodes |
355 |
BSR43 |
PNP Med Power Transistor |
Zetex Semiconductors |
356 |
BUF16820 |
14-Channel GAMMA VOLTAGE GENERATOR with Programmable Vcom Outputs and OTP Memory 32-HTSSOP -40 to 85 |
Texas Instruments |
357 |
BUF16820AIDAPR |
14-Channel GAMMA VOLTAGE GENERATOR with Programmable Vcom Outputs and OTP Memory 32-HTSSOP -40 to 85 |
Texas Instruments |
358 |
CK100B |
3.000W General Purpose PNP Metal Can Transistor. 50V Vceo, A Ic, 100 - 300 hFE. Complementary CL100B |
Continental Device India Limited |
359 |
CK100S |
3.000W General Purpose PNP Metal Can Transistor. 50V Vceo, A Ic, 20 hFE. |
Continental Device India Limited |
360 |
CP1016 |
60.000W General Purpose PNP Metal Can Transistor. 150V Vceo, 10.000A Ic, 2000 - 20000 hFE. |
Continental Device India Limited |
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