| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2SD2264 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 332 |
2SD2318 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 333 |
2SD2391 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 334 |
2SD2537 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 335 |
2SD2568 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 336 |
2SD2653 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 337 |
2SD2657 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 338 |
2SD2672 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 339 |
2SD2673 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 340 |
2SD2674 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 341 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 342 |
2STA1695 |
High power PNP epitaxial planar bipolar transistor |
ST Microelectronics |
| 343 |
2STA1943 |
High power PNP epitaxial planar bipolar transistor |
ST Microelectronics |
| 344 |
2STC5242 |
High power NPN epitaxial planar bipolar transistor |
ST Microelectronics |
| 345 |
2STF2280 |
Transistors, Power Bipolar, Low Voltage - High Performance |
ST Microelectronics |
| 346 |
2STN2540 |
Low voltage fast-switching PNP power bipolar transistor |
ST Microelectronics |
| 347 |
2STW100 |
Transistors, Power Bipolar, Darlington |
ST Microelectronics |
| 348 |
2STW200 |
Transistors, Power Bipolar, Darlington |
ST Microelectronics |
| 349 |
2W005G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 350 |
2W01G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 351 |
2W02G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 352 |
2W04G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 353 |
2W06G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 354 |
2W08G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 355 |
2W10G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 356 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 357 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 358 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 359 |
30KW108A |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 360 |
30KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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