| No. |
Part Name |
Description |
Manufacturer |
| 331 |
1N821 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 332 |
1N821 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 333 |
1N821-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 334 |
1N821-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 335 |
1N821A |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
| 336 |
1N821A |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 337 |
1N821A |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 338 |
1N821A |
Silicon Voltage Reference Diode temperature compensated 6.2V |
Transitron Electronic |
| 339 |
1N821A-1 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 340 |
1N821A-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 341 |
1N821AUR-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 342 |
1N821UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 343 |
1N821UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 344 |
1N821UR-1 |
TEMPERATURE COMPENSATED ZENER DIODES |
Compensated Devices Incorporated |
| 345 |
1N821UR-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 346 |
1N822 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 347 |
1N822 |
Silicon Voltage Reference Diode temperature compensated 6.2V |
Transitron Electronic |
| 348 |
1N822-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 349 |
1N822-1e3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 350 |
1N822A |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 351 |
1N822UR |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes |
Microsemi |
| 352 |
1N822UR-1 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 353 |
1N822UR-1e3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 354 |
1N823 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
| 355 |
1N823 |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
| 356 |
1N823 |
Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN |
Transitron Electronic |
| 357 |
1N823-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Microsemi |
| 358 |
1N823-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 359 |
1N823A |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
| 360 |
1N823A |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
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