| No. |
Part Name |
Description |
Manufacturer |
| 331 |
2SD874-Q |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 332 |
2SD874-R |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 333 |
2SD874-S |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 334 |
2SD874A-Q |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 335 |
2SD874A-R |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 336 |
2SD874A-S |
SOT-89 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 337 |
2SD880-GR |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 338 |
2SD880-Q |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 339 |
2SD880-Y |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 340 |
2SD882-GR |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 341 |
2SD882-O |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 342 |
2SD882-R |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 343 |
2SD882-Y |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 344 |
3CA8772 |
TO-126 Plastic-Encapsulate Transistors |
etc |
| 345 |
3DA4793 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 346 |
3DD13001 |
TO 92 PLASTIC ENCAPSULATE TRANSISTORS |
Unknow |
| 347 |
3DD13002 |
TO-251 Plastic-Encapsulate Transistors |
etc |
| 348 |
3N128 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 349 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
| 350 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| 351 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 352 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
| 353 |
3N153 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 354 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 355 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 356 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 357 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 358 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 359 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 360 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
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