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Datasheets for SUPPLY VO

Datasheets found :: 1191
Page: | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 |
No. Part Name Description Manufacturer
331 K4E160411D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
332 K4E160412D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
333 K4E160412D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
334 K4E160811D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
335 K4E160811D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
336 K4E160812D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
337 K4E160812D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
338 K4E170411D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
339 K4E170411D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
340 K4E170412D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
341 K4E170412D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
342 K4E170811D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
343 K4E170811D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
344 K4E170812D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
345 K4E170812D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
346 K4E171611D-J 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
347 K4E171611D-T 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
348 K4E171612D-J 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
349 K4E171612D-T 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
350 K4F151611D-J 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. Samsung Electronic
351 K4F151611D-T 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. Samsung Electronic
352 K4F151612D-J 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. Samsung Electronic
353 K4F151612D-T 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. Samsung Electronic
354 K4F160411D-B 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
355 K4F160411D-F 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
356 K4F160412D-B 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
357 K4F160412D-F 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
358 K4F160811D-B 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
359 K4F160811D-F 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
360 K4F160812D-B 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic


Datasheets found :: 1191
Page: | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 |



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