No. |
Part Name |
Description |
Manufacturer |
331 |
G910TD3D |
3.3V 400mA/250mA Low Dropout Regulator |
Global Mixed-mode Technology |
332 |
G910TD3T |
3.3V 400mA/250mA Low Dropout Regulator |
Global Mixed-mode Technology |
333 |
G910TD3U |
3.3V 400mA/250mA Low Dropout Regulator |
Global Mixed-mode Technology |
334 |
G911TD3B |
3.3V 400mA/250mA Low Dropout Regulator |
Global Mixed-mode Technology |
335 |
G911TD3D |
3.3V 400mA/250mA Low Dropout Regulator |
Global Mixed-mode Technology |
336 |
G911TD3T |
3.3V 400mA/250mA Low Dropout Regulator |
Global Mixed-mode Technology |
337 |
G911TD3U |
3.3V 400mA/250mA Low Dropout Regulator |
Global Mixed-mode Technology |
338 |
HGTD3N60A4 |
600V/ SMPS Series N-Channel IGBT |
Fairchild Semiconductor |
339 |
HGTD3N60A4S |
600V, SMPS Series N-Channel IGBT |
Fairchild Semiconductor |
340 |
HGTD3N60A4S |
600V/ SMPS Series N-Channel IGBT |
Intersil |
341 |
HGTD3N60B3S |
7A, 600V, UFS Series N-Channel IGBTs |
Fairchild Semiconductor |
342 |
HGTD3N60B3S |
7A/ 600V/ UFS Series N-Channel IGBTs |
Intersil |
343 |
HGTD3N60C3 |
6A, 600V, UFS Series N-Channel IGBTs |
Fairchild Semiconductor |
344 |
HGTD3N60C3S |
6A, 600V, UFS Series N-Channel IGBTs |
Fairchild Semiconductor |
345 |
HGTD3N60C3S |
6A/ 600V/ UFS Series N-Channel IGBTs |
Intersil |
346 |
KTD3055 |
General Purpose Transistor |
Korea Electronics (KEC) |
347 |
MAX6715AUTLTD3+ |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
348 |
MAX6715AUTLTD3+T |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
349 |
MAX6715UTLTD3 |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
350 |
MAX6715UTLTD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
351 |
MAX6715UTLTD3-T |
Vcc1 4.625 V,Vcc2 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
352 |
MAX6716UTLTD3-T |
Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
353 |
MAX6717AUKLTD3+ |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
354 |
MAX6717AUKLTD3+T |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
355 |
MAX6717UKLTD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
356 |
MAX6717UKLTD3+T |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
357 |
MAX6717UKLTD3-T |
Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
358 |
MAX6718AUKLTD3+ |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
359 |
MAX6718AUKLTD3+T |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
360 |
MAX6718UKLTD3-T |
Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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