| No. |
Part Name |
Description |
Manufacturer |
| 331 |
PT9780 |
SSB Power RF Transistor 100W PEP 28V 2-30MHz 14dB |
Motorola |
| 332 |
PT9780 |
SSB Power Transistor 100W 28V |
TRW |
| 333 |
PT9785 |
SSB Power RF Transistor 100W PEP 13.5V 2-30MHz 13dB |
Motorola |
| 334 |
PT9785 |
SSB Power Transistor 100W 13.5V |
TRW |
| 335 |
PTF080101 |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
Infineon |
| 336 |
PTF080101S |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
Infineon |
| 337 |
PTF180101 |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
| 338 |
PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz |
Infineon |
| 339 |
R1250VXX1A SERIES |
Negative Output Charge Pump Regulator 100mA |
Ricoh |
| 340 |
SE529K |
High Speed Differential Comparator 10-TO-100 0 to 70 |
Texas Instruments |
| 341 |
SF1000EX22 |
Silicon alloy-diffused junction thyristor 1000A 2500V flat package |
TOSHIBA |
| 342 |
SF10B12 |
Silicon alloy-diffused junction thyristor 10A 100V |
TOSHIBA |
| 343 |
SF10D12 |
Silicon alloy-diffused junction thyristor 10A 200V |
TOSHIBA |
| 344 |
SF10F12 |
Silicon alloy-diffused junction thyristor 10A 300V |
TOSHIBA |
| 345 |
SF10G12 |
Silicon alloy-diffused junction thyristor 10A 400V |
TOSHIBA |
| 346 |
SF10J12 |
Silicon alloy-diffused junction thyristor 10A 600V |
TOSHIBA |
| 347 |
SF10L12 |
Silicon alloy-diffused junction thyristor 10A 800V |
TOSHIBA |
| 348 |
SF10N12 |
Silicon alloy-diffused junction thyristor 10A 1000V |
TOSHIBA |
| 349 |
SH80D11 |
Silicon alloy-diffused junction high speed thyristor 100A 200V |
TOSHIBA |
| 350 |
SH80F11 |
Silicon alloy-diffused junction high speed thyristor 100A 300V |
TOSHIBA |
| 351 |
SH80G11 |
Silicon alloy-diffused junction high speed thyristor 100A 400V |
TOSHIBA |
| 352 |
SH80H11 |
Silicon alloy-diffused junction high speed thyristor 100A 500V |
TOSHIBA |
| 353 |
SH80J11 |
Silicon alloy-diffused junction high speed thyristor 100A 600V |
TOSHIBA |
| 354 |
SH80L11 |
Silicon alloy-diffused junction high speed thyristor 100A 800V |
TOSHIBA |
| 355 |
SM10D14 |
Silicon alloy-diffused junction BI-DIRECTIONAL triode thyristor 10A 200V |
TOSHIBA |
| 356 |
SM10G14 |
Silicon alloy-diffused junction BI-DIRECTIONAL triode thyristor 10A 400V |
TOSHIBA |
| 357 |
SML3P10 |
MOSPOWER P-Channel Enhancement Mode Transistor 100V 2.6A |
Siliconix |
| 358 |
SMM20P10 |
MOSPOWER P-Channel Enhancement Mode Transistor 100V 20A |
Siliconix |
| 359 |
SMP20P10 |
MOSPOWER P-Channel Enhancement Mode Transistor 100V 20A |
Siliconix |
| 360 |
SMP3P06 |
MOSPOWER P-Channel Enhancement Mode Transistor 100V 3A |
Siliconix |
| | | |
