| No. |
Part Name |
Description |
Manufacturer |
| 331 |
AT89C5131 |
USB C51-based Microcontroller with 32K Bytes Flash, 1K Byte Data EEPROM, 1280 bytes RAM, 7 USB Endpoints, TWI, SPI, UART, PCA |
Atmel |
| 332 |
ATF16V8BQ |
250 gate electrically erasable PLD, 20 pins, quarter power, 5V |
Atmel |
| 333 |
ATF16V8BQL |
250 gate electrically erasable PLD, 20 pins, quarter and low power, 5V |
Atmel |
| 334 |
ATF20V8BQ |
300 gate electrically erasable PLD, 24 and 28 pins, quarter power, 5V |
Atmel |
| 335 |
ATF20V8BQL |
300 gate electrically erasable PLD, 24 and 28 pins, quarter and low power, 5V |
Atmel |
| 336 |
ATF22LV10CQZ |
500 gate, wide 3V to 5.5V supply range, zero and quarter power electrically erasable PLD, 24 and 28 pins |
Atmel |
| 337 |
ATF22V10CQ |
500 gate high-speed electrically erasable PLD, 24 and 28 pins, quarter power, 5V |
Atmel |
| 338 |
ATF22V10CQZ |
500 gate high-speed, quarter and zero power electrically erasable PLD, 24 and 28 pins, 5V |
Atmel |
| 339 |
ATTINY2313 |
2K Bytes of In-System Self-Programmable Flash, 128 Bytes In-System Programmable EEPROM, 128 Bytes Internal SRAM. USI--Universal Serial Interface, Full Duplex UART. debugWIRE for on-chip-debug. Up to 16 MIPS throughput at 16 MHz. |
Atmel |
| 340 |
ATV2500BQ |
2500 gate high-speed CPLD, quarter power, 40 and 44 pins offered in Military Temp Grade only, 5V. |
Atmel |
| 341 |
ATV2500BQL |
2500 gate high-speed CPLD, quarter and low power, 40 and 44 pins offered in Military Temp Grade only, 5V. |
Atmel |
| 342 |
B120_B |
20V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 343 |
B130_B |
30V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 344 |
B140_B |
40V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 345 |
B150_B |
50V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 346 |
B160_B |
60V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 347 |
B220_A |
20V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 348 |
B230_A |
30V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 349 |
B240_A |
40V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 350 |
B250_A |
50V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 351 |
B260_A |
60V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 352 |
B320_A_B |
20V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 353 |
B330_A_B |
30V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 354 |
B340_A_B |
40V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 355 |
B350_A_B |
50V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 356 |
B360_A_B |
60V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 357 |
BA6138 |
Square-law compression amplifiers |
ROHM |
| 358 |
BA6138F |
Square-law compression amplifiers |
ROHM |
| 359 |
BAT64 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
| 360 |
BAT64-04 |
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) |
Siemens |
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