No. |
Part Name |
Description |
Manufacturer |
331 |
HA7-2645-5 |
4MHz/ High Supply Voltage Operational Amplifiers |
Intersil |
332 |
ISL55001 |
High Supply Voltage 220MHz Unity-Gain Stable Operational Amplifier |
Intersil |
333 |
ISL55002 |
High Supply Voltage 200MHz Unity-Gain Stable Operational Amplifier |
Intersil |
334 |
ISL55004 |
High Supply Voltage 200MHz Unity-Gain Stable Operational Amplifier |
Intersil |
335 |
ISL59451 |
Triple 4:1 DC Restored Single Supply Video Multiplexing Amplifier |
Intersil |
336 |
ISL59452 |
Triple 4:1 Single Supply Video Multiplexing Amplifier |
Intersil |
337 |
ISL59830 |
True Single Supply Video Driver |
Intersil |
338 |
ISL59830A |
True Single Supply Video Driver With Power Down |
Intersil |
339 |
ISL59831 |
Single Supply Video Driver with Reconstruction Filter and Charge Pump |
Intersil |
340 |
ISL59832 |
Dual Channel, Single Supply Video Reconstruction Filter with Charge Pump |
Intersil |
341 |
ISL59833 |
200MHz Single Supply Video Driver With Charge Pump |
Intersil |
342 |
ISL59837 |
200MHz Single Supply Video Driver With Charge Pump and Power Down |
Intersil |
343 |
ISL6307B |
6-Phase VR11 PWM Controller with 8-Bit VID Code Capable of Precision RDS(ON) or DCR Differential Current Sensing for Applications in Which Supply Voltage is Higher than 5V |
Intersil |
344 |
ISL9491 |
Single Output LNB Supply Voltage Regulator for Satellite Set-Top Box Applications |
Intersil |
345 |
ISL9491A |
Single Output LNB Supply Voltage Regulator for Satellite Set-Top Box Applications |
Intersil |
346 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
347 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
348 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
349 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
350 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
351 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
352 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
353 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
354 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
355 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
356 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
357 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
358 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
359 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
360 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
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