| No. |
Part Name |
Description |
Manufacturer |
| 331 |
M29F100-B70XN1R |
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
ST Microelectronics |
| 332 |
M29F100-B70XN1TR |
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
ST Microelectronics |
| 333 |
M29F100-B90XN1R |
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
ST Microelectronics |
| 334 |
M29F100-B90XN1TR |
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
ST Microelectronics |
| 335 |
M29F100-T120XN1R |
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
ST Microelectronics |
| 336 |
M29F100-T120XN1TR |
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
ST Microelectronics |
| 337 |
M29F100-T70XN1R |
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
ST Microelectronics |
| 338 |
M29F100-T70XN1TR |
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
ST Microelectronics |
| 339 |
M29F100-T90XN1R |
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
ST Microelectronics |
| 340 |
M29F100-T90XN1TR |
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory |
ST Microelectronics |
| 341 |
TDA955XN1 |
TV signal processor-Teletext decoder with embedded m-Controller |
Philips |
| 342 |
TDA956XN1 |
TV signal processor-Teletext decoder with embedded m-Controller |
Philips |
| 343 |
TDA958XN1 |
TV signal processor-Teletext decoder with embedded m-Controller |
Philips |
| 344 |
TXN1008G |
V(drm): 1000V; 8A; glass passivated thyristor |
SGS Thomson Microelectronics |
| 345 |
TXN1008K |
V(drm): 1000V; 8A; glass passivated thyristor |
SGS Thomson Microelectronics |
| 346 |
TXN1012 |
HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY |
SGS Thomson Microelectronics |
| 347 |
TXN1012 |
HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY |
ST Microelectronics |
| 348 |
TXN108G |
V(drm): 100V; 8A; glass passivated thyristor |
SGS Thomson Microelectronics |
| 349 |
TXN108K |
V(drm): 100V; 8A; glass passivated thyristor |
SGS Thomson Microelectronics |
| 350 |
TXN112 |
HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY |
SGS Thomson Microelectronics |
| 351 |
TXN112 |
HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY |
ST Microelectronics |
| 352 |
XN1110 |
Composite Device - Composite Transistors |
Panasonic |
| 353 |
XN1111 |
Composite Device - Composite Transistors |
Panasonic |
| 354 |
XN1112 |
Composite Device - Composite Transistors |
Panasonic |
| 355 |
XN1113 |
Composite Device - Composite Transistors |
Panasonic |
| 356 |
XN1114 |
Composite Device - Composite Transistors |
Panasonic |
| 357 |
XN1115 |
Composite Device - Composite Transistors |
Panasonic |
| 358 |
XN1116 |
Composite Device - Composite Transistors |
Panasonic |
| 359 |
XN1117 |
Composite Device - Composite Transistors |
Panasonic |
| 360 |
XN1118 |
Composite Device - Composite Transistors |
Panasonic |
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