| No. |
Part Name |
Description |
Manufacturer |
| 331 |
BAY90 |
Diffused silicon general purpose diodes with very high reverse voltage |
AEG-TELEFUNKEN |
| 332 |
BAY91 |
Diffused silicon general purpose diodes with very high reverse voltage |
AEG-TELEFUNKEN |
| 333 |
BB669 |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance) |
Siemens |
| 334 |
BB689 |
Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series inductance Low series resistance) |
Siemens |
| 335 |
BBY55-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 336 |
BBY55-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 337 |
BBY56-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 338 |
BBY56-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 339 |
BBY57-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio) |
Siemens |
| 340 |
BBY57-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 341 |
BBY58-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 342 |
BBY58-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 343 |
BFR37 |
Epitaxial planar NPN transistor, very high fT and very low Cre |
SGS-ATES |
| 344 |
BFW92 |
NPN high-frequency transistor, low noise over a wide current range, very high power gain and good intermodulation |
Philips |
| 345 |
BY268 |
0.8A FAST RECOVERY HIGH VOLTAGE GLASS BODY RECTIFIER |
Diodes |
| 346 |
BY269 |
0.8A FAST RECOVERY HIGH VOLTAGE GLASS BODY RECTIFIER |
Diodes |
| 347 |
CD22100 |
CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating) |
Intersil |
| 348 |
CD22100E |
CMOS 4 x 4 crosspoint switch with control memory high-voltage type (20V rating) |
Harris Semiconductor |
| 349 |
CD22100E |
CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating) |
Intersil |
| 350 |
CD22100F |
CMOS 4 x 4 crosspoint switch with control memory high-voltage type (20V rating) |
Harris Semiconductor |
| 351 |
CD22100F |
CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating) |
Intersil |
| 352 |
CFY77 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 353 |
CFY77-08 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 354 |
CFY77-10 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 355 |
CHA2095A |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
| 356 |
CHA2095A99F/00 |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
| 357 |
CHA2395 |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
| 358 |
CHA2395-99F/00 |
36-40GHz Low Noise Very High Gain Amplifier |
United Monolithic Semiconductors |
| 359 |
CLC5654 |
Very High Speed, Low Cost, Quad Operational Amplifier |
National Semiconductor |
| 360 |
CLC5654IM |
Very High-Speed/ Low-Cost/ Quad Operational Amplifier |
National Semiconductor |
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