No. |
Part Name |
Description |
Manufacturer |
331 |
ISL55002 |
High Supply Voltage 200MHz Unity-Gain Stable Operational Amplifier |
Intersil |
332 |
ISL55004 |
High Supply Voltage 200MHz Unity-Gain Stable Operational Amplifier |
Intersil |
333 |
ISL6307B |
6-Phase VR11 PWM Controller with 8-Bit VID Code Capable of Precision RDS(ON) or DCR Differential Current Sensing for Applications in Which Supply Voltage is Higher than 5V |
Intersil |
334 |
ISL9491 |
Single Output LNB Supply Voltage Regulator for Satellite Set-Top Box Applications |
Intersil |
335 |
ISL9491A |
Single Output LNB Supply Voltage Regulator for Satellite Set-Top Box Applications |
Intersil |
336 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
337 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
338 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
339 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
340 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
341 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
342 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
343 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
344 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
345 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
346 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
347 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
348 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
349 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
350 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
351 |
K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
352 |
K4E170811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
353 |
K4E170811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
354 |
K4E170812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
355 |
K4E170812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
356 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
357 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
358 |
K4E171612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
359 |
K4E171612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
360 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
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